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Semiconductor device, manufacturing method thereof and electronic device

A manufacturing method and technology of electronic devices, applied to semiconductor devices, circuits, electrical components, etc., capable of solving problems such as local Vt mismatch

Active Publication Date: 2019-06-11
SEMICON MFG NORTH CHINA (BEIJING) CORP +2
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And due to other effects such as leakage, local Vt mismatch (mis-match), etc., it is difficult to solve it by ion implantation

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

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Embodiment Construction

[0035] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0036] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0037] It will be understood that when an element or layer is referred t...

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a diffusion barrier layer in the area that a gate structure is formed in a predetermined manner on the semiconductor substrate, wherein the diffusion barrier layer comprises metal and non-metal elements; and using plasma containing the non-metal elements to treat the dispersion barrier layer so as to reduce the content ratio of the metal elements to the non-metal elements inside the diffusionbarrier layer. According to the method provided by the invention, the distribution uniformity, on the semiconductor substrate, of the threshold voltage of the device can be improved, and the mismatching problem of local threshold voltage is solved so as to finally improve the performance and yield of the device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the field of integrated circuit manufacturing, as the size of MOS transistors continues to shrink, the physical limits of devices have an increasing impact on device fabrication, and it becomes more difficult to scale down the feature size of devices. Among them, MOS transistors and their The field of circuit manufacturing is prone to the problem of leakage from the gate to the substrate. [0003] In the fabrication process of semiconductor devices, replacing metal gates is widely used to obtain lower leakage and higher device performance. The threshold voltage (Vt) of an NMOS device is one of the most important parameters affecting device performance. And due to other influences such as electric leakage, local Vt mismatch (mis-match), etc., it is di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L29/06H01L29/423
Inventor 徐建华邓浩
Owner SEMICON MFG NORTH CHINA (BEIJING) CORP
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