An organic electroluminescent device containing a covering layer and its application
An electroluminescent device and electroluminescent technology, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems of low light extraction efficiency and reduce device angle dependence, and achieve high light extraction efficiency, good application effect and industrial Chemical prospect, good device effect
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Embodiment 1
[0135] Prepare an organic electroluminescent device with the following preparation steps, comprising:
[0136] On the low-temperature polysilicon (LTPS) substrate (substrate layer 100), a 10nm ITO film (first electrode layer 200) was formed by sputtering, etched into required patterns, and ultrasonically cleaned with deionized water, acetone, and ethanol, respectively. 15 minutes, and then processed in a plasma cleaner for 2 minutes; here the ITO electrode layer is an anode, and on the ITO anode layer, the hole injection layer material HAT-CN is evaporated by vacuum evaporation, and the thickness is 10nm. As the hole injection layer 310; on the hole injection layer 310, the hole transport material NPB is evaporated by vacuum evaporation, with a thickness of 110nm, and this layer is the hole transport layer 320, which can also be used as a microcavity adjustment layer; On the hole transport layer 320, the electron blocking material TCTA is evaporated by vacuum evaporation with ...
Embodiment 2
[0138] The preparation method is the same as device embodiment 1, but adopts the following device structure:
[0139] ITO(10nm) / NPB:Compound A(97:3 mass ratio, 97 mass% NPB)(10nm) / NPB(150nm) / TCTA(10nm) / CBP:Ir(PPy) 3 (90:10 mass ratio, 90 mass% of CBP) (40nm) / / TPBI (35nm) / compound D (1nm) / Yb (1nm) / Mg:Ag (10:90 mass ratio, 10 mass% of Mg) (14 nm) / Compound 1 of the present invention (50 nm).
Embodiment 3
[0141] The preparation method is the same as device embodiment 1, but adopts the following device structure:
[0142] ITO (10nm) / NPB: Compound C (95:5 mass ratio, 95% by mass of NPB) (10nm) / NPB (190nm) / TCTA (10nm) / CBP:Ir(pq)2acac (96:4 mass ratio, 96% by mass of CBP) (40nm) / TPBI (35nm) / compound D (1nm) / Yb (1nm) / Mg:Ag (10:90 mass ratio, 10% by mass of Mg) (14nm) / Compound 1 of the present invention (50nm).
[0143] Device Embodiments 4, 7, 10, 13, 16, 19, 22, 25, 28, 31, 34, 37, 40, 43, 46, 49, 52, 55, 58, 61, 64, 67, 70, 73 , 76, 79, 82, 85, 88, 91, 94, 97, 100, 103, 106, 109, 112, 115, 118, 121, 124, 127:
[0144] The preparation method is the same as that of Device Example 1, except that compounds 6, 14, 24, 37, 42, 52, 60, 81, 91, 102, 114, 127, 137, 147, 156, 162, 174, 183,193,206,219,228,246,255,270,275,289,300,311,316,328,340,351,360,370,387,397,404,416,426,436,440 as Cover layer materials for organic electroluminescent devices.
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