based on fe 3 Design and fabrication of magnetic tunnel junctions with n/gan heterostructures

A magnetic tunnel junction and heterostructure technology, applied in the field of information industry, can solve the problems of low spin injection efficiency, mismatch of ferromagnetic electrodes and insulating conductance, etc., and achieve the effect of improving spin injection efficiency

Active Publication Date: 2022-07-26
NANJING UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0003] The ferromagnetic electrode of the traditional magnetic tunnel junction is usually made of metal materials such as Fe, so the conductance of the ferromagnetic electrode and the insulating (semiconductor) tunneling layer does not match, which leads to low spin injection efficiency

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  • based on fe <sub>3</sub> Design and fabrication of magnetic tunnel junctions with n/gan heterostructures

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Embodiment Construction

[0018] The technical solutions of the present invention will be further described in detail below with reference to the accompanying drawings.

[0019] Fe-based 3 Design and preparation method of a magnetic tunnel junction of N / GaN heterostructure, the design of the magnetic tunnel junction includes a substrate 1, and a ferromagnetic electrode 2, a barrier layer 3, and a ferromagnetic electrode arranged on the substrate in sequence 4. Pinning layer 5, protective layer 6.

[0020] The preparation method comprises the following steps:

[0021] In step 1, the (0006) oriented single crystal sapphire thin film is used as the substrate 1, and is cleaned with alcohol in an ultrasonic cleaner for 5 minutes.

[0022] In step 2, a layer of (002) oriented Fe is sputtered on the sapphire substrate 1 in step 1 by using a magnetron sputtering method 3 N thin film as the ferromagnetic electrode 2 . Among them, the purity of the iron target is not less than 99.99%, and the condition is th...

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Abstract

Fe-based 3 Design and preparation method of magnetic tunnel junction of N / GaN heterostructure, design of magnetic tunnel junction, including substrate, and ferromagnetic electrode, barrier layer, ferromagnetic electrode, pinning layer, protective layer; the preparation method includes the following steps: step 1, using a single crystal sapphire film as a substrate, and cleaning it with alcohol in an ultrasonic cleaner for 5 minutes; step 2, using a magnetic field on the sapphire substrate in step 1 Sputtering a layer of Fe by controlled sputtering 3 N film, as a ferromagnetic electrode; step 3, sputter a layer of GaN film on the surface of the sample obtained in step 2, as a barrier layer; step 4, sputter a layer of Fe on the surface of the sample obtained in step 3 3 The N thin film is used as a ferromagnetic electrode; in step 5, the surface of the sample obtained in step 4 is sequentially IrMn pinned layer and Ru protective layer using standard techniques. The present invention makes the conductance of the ferromagnetic electrode and the tunneling layer more matched through the selection of materials, thereby improving the spin injection efficiency.

Description

technical field [0001] The present invention relates to a Fe-based 3 The design and preparation method of magnetic tunnel junction of N / GaN heterostructure belong to the field of information industry. Background technique [0002] Magnetic tunnel junction refers to sandwiching an extremely thin insulating layer with a thickness of several nanometers between two ferromagnetic flakes to form a so-called junction element. In ferromagnetic materials, due to quantum mechanical exchange, the 3d orbital localized electronic energy band of ferromagnetic metals is split, so that the electrons with spin up and down near the Fermi surface have different energy state densities. In MTJs, the mechanism of TMR effect is spin-dependent tunneling. The general structure of MTJs is a sandwich structure of ferromagnetic layer / nonmagnetic insulating layer / ferromagnetic layer (FM / I / FM). During saturation magnetization, the magnetization directions of the two ferromagnetic layers are parallel t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12
Inventor 方贺男李影彭祥陶志阔
Owner NANJING UNIV OF POSTS & TELECOMM
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