A method and structure for injecting spins into a two-dimensional electron gas of Gan-based heterostructures

A two-dimensional electron gas and spin injection technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as spin relaxation and lower spin injection efficiency

Active Publication Date: 2021-03-02
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In order to solve the problem of spin relaxation due to the too large thickness of the barrier layer when injecting spins into the two-dimensional electron gas in the GaN-based heterostructure, thereby reducing the spin injection efficiency, the present invention adopts the AlN / GaN heterostructure structure, the thickness of the barrier layer can be reduced as much as possible, and at the same time, AlN can be used as a tunneling layer for spin injection to achieve single crystal growth on GaN, with high-quality crystal quality and interface, which is very conducive to spin injection

Method used

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  • A method and structure for injecting spins into a two-dimensional electron gas of Gan-based heterostructures
  • A method and structure for injecting spins into a two-dimensional electron gas of Gan-based heterostructures
  • A method and structure for injecting spins into a two-dimensional electron gas of Gan-based heterostructures

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Experimental program
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Effect test

Embodiment 1

[0033]The preparation of the spin injection structure and the spin-electric injection are achieved through the following steps:

[0034]S1: Use molecular beam epitaxy or metal-organic chemical vapor deposition methods to grow and re-grow GaN layer 2, GaN thin layer 3, and high-quality AlN single crystal layer 4 on substrate 1. In order to prevent AlN oxidation, grow high-quality AlN single crystal After the crystal layer 4, it is necessary to keep the sample in a vacuum environment, and continue to grow the ferromagnetic layer 5 and the protective metal layer 6.

[0035]In the above step S1, the GaN template substrate is grown using MOCVD with a thickness of about 1mm; the high-quality GaN thin layer 3 is grown with MBE with a thickness of about 120nm; the high-quality AlN single crystal layer 4 is grown with MBE with a thickness of about 2nm; the ferromagnetic layer 5 The material of Co is deposited by electron beam with a thickness of 10nm; the material Au of the protective metal layer ...

Embodiment 2

[0038]The steps of this embodiment are basically the same as those of the first embodiment. The difference is that it is difficult to maintain the same vacuum degree for the growth of AlN and the ferromagnetic layer. After the high-quality AlN single crystal layer 4 is grown, hydrogen silsesquioxane (HSQ) is spin-coated in the same vacuum environment, with a thickness of about 200 nm, which is enough to ensure its insulation performance afterwards. Afterwards, the negative electron beam photoresist layer 7 is spin-coated for the stripping of the ferromagnetic metal electrode. Expose the spin injection electrode pattern with an electron beam and develop it so that the AlN under the electrode shape is exposed, and the rest of the HSQ becomes SiO-like2Nature of the protective layer 8, such asimage 3 Shown. In this embodiment, the protective layer 8 is mainly used to prevent oxidation of AlN, and as an insulating layer to isolate the source and drain electrodes and the sample to prevent...

Embodiment 3

[0041]The spin injection junction obtained by the method described in Example 3 can realize the electric spin injection.

[0042]During the experiment of spin-electric injection, it is impossible to guarantee the simultaneous growth of AlN and Co without damaging the vacuum, or the spin-coating of HSQ. In order to minimize the exposure time of AlN in the air, plasma-enhanced chemical vapor deposition (PECVD) was used to grow SiO in the experiment.2Instead of HSQ to protect AlN, there will be several atomic layers of Al on the surface of AlN2O3, But does not affect the effect of the tunneling junction, and spin injection can also be achieved. CorrectFigure 5 The three-terminal spin injection device shown performs low-temperature magnetic transport to measure the effect of spin injection.Figure 5 The IV characteristic characteristic curve of the Au / Co / AlN 2.5nm / GaN tunnel junction shown is as followsFigure 6 As shown, it shows that 2.5nm AlN exhibits one-time tunneling characteristics an...

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Abstract

The invention provides a method and structure for injecting spins into a GaN-based heterostructure two-dimensional electron gas, belonging to the technical field of semiconductor spin electronics. The method prepares an AlN / GaN heterostructure and controls the thickness of the AlN to be about 1-3nm, so that the AlN acts as a barrier layer and a tunneling layer to inject spins at the same time. The invention can greatly improve the efficiency of injecting spins into the two-dimensional electron gas in the GaN-based heterostructure, promote the research on the spin properties of the two-dimensional electron gas in the GaN-based heterostructure, and obtain spin electrons with excellent properties learning devices.

Description

Technical field[0001]The invention belongs to the technical field of semiconductor spintronics, and relates to the growth of single crystals of high-quality barrier layers and tunneling layers on GaN, and a method for injecting spins into a two-dimensional electron gas in a GaN-based heterostructure.Background technique[0002]In 2016, the author of Nature pointed out that the post-Moore's law period has arrived, and spintronics will be one of the important directions for continued development. Using the degree of freedom of spin instead of electronic charge to transfer information can solve the problems of high heat generation and device failure caused by the continuous shrinking of the device size and the continuous increase of integration. At the same time, the speed of spin flipping between the two eigenstates is much faster than that of ordinary electronic devices passing information through gate voltage cutoff. Generally speaking, compared with traditional electronic devices, sp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/66462H01L29/778H01L29/7786
Inventor 唐宁沈波张晓玥杨流云管鸿明刘星辰王新强杨学林许福军
Owner PEKING UNIV
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