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Terahertz vacuum diode and manufacturing method thereof

Technology of a vacuum diode, manufacturing method, applied in the field of optoelectronics

Inactive Publication Date: 2019-06-07
BEIHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the bottleneck in the development of miniaturized, high-power, and broadband continuous-wave terahertz radiation sources lies in the fact that the frequency band involved is just in the transition zone from macroelectronics to microphotonics, because of its physical mechanism and technical limitations. There are many problems in the research and development of radiation generation and detection devices

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  • Terahertz vacuum diode and manufacturing method thereof
  • Terahertz vacuum diode and manufacturing method thereof
  • Terahertz vacuum diode and manufacturing method thereof

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Embodiment Construction

[0037] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] The exploration and research of terahertz spectrum resources and the development and application of terahertz science and technology have always been restricted by the performance of terahertz sources and detectors. Vacuum electronics has been an important technological route to provide high power sources. Vacuum microelectronic devices can enable electrons to achieve bal...

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Abstract

Embodiments of the invention disclose a terahertz vacuum diode and a manufacturing method thereof. The terahertz vacuum diode includes a photocathode, a vacuum channel layer and an anode; the vacuum channel layer is provided with a vacuum channel; the vacuum channel penetrates the vacuum channel layer; the photocathode and the anode are arranged on the two ends of the vacuum channel; sealing cavities are formed between the photocathode, the vacuum channel layer and the anode; the vacuum channel is in a circular truncated cone shape; and the contact area of the photocathode and the vacuum channel is less than that of the anode and the vacuum channel. A novel terahertz vacuum electronic device can be provided through the provided terahertz vacuum diode and the manufacturing method thereof.

Description

technical field [0001] Embodiments of the present invention relate to the field of optoelectronic technology, and in particular to a terahertz vacuum diode and a manufacturing method thereof. Background technique [0002] The frequency range of terahertz (THz) electromagnetic wave is 0.1-10THz, and the wavelength range is 0.03-3mm. It is an electromagnetic wave between microwave, millimeter wave and infrared. Terahertz electromagnetic waves are just in the frequency domain of the transition from macroelectronics to microphotonics, because of their high frequency, wide frequency bandwidth, good coherence, strong anti-interference, good penetration ability, easy anti-stealth, and low photon energy, etc. A series of excellent technical characteristics make national defense weapons and equipment, applied electronic systems and scientific detection instruments located in these frequency bands in high-transmission rate data transmission, large-capacity channel communication, high-...

Claims

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Application Information

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IPC IPC(8): H01J21/04H01J19/02H01J19/32H01J19/54H01J9/12H01J9/30
Inventor 阮存军戴军徐向晏刘虎林丁一坤
Owner BEIHANG UNIV
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