Photovoltaic battery chip and fabrication method thereof

Abstract

The invention discloses a photovoltaic battery chip and a fabrication method thereof. The photovoltaic battery chip comprises a matrix, a semiconductor layer, a first electrode layer and a second transmitting electrode layer, wherein the first electrode layer and the second electrode layer are arranged at two opposite layers of the semiconductor layer, at least one anti-reflection film combinationlayer is attached onto a surface, far away from the semiconductor layer, of the second electrode layer, the anti-reflection film combination layer comprises a first anti-reflection film layer and a second anti-reflection film layer, the first anti-reflection film layer is formed on a surface of the second electrode layer, the second anti-reflection film layer is formed on a surface of the first anti-reflection film layer, the refractivity of the first anti-reflection layer is smaller than the refractivity of the second anti-reflection film layer, and the refractivity of the first anti-reflection layer is smaller than the refractivity of the second electrode layer. The surface of the second electrode layer can be covered and protected very well by the anti-reflection film layer combinationlayer contained in the photovoltaic battery chip provided by the invention, the anti-reflection effect is effectively improved, the photoelectric conversion efficiency of the photovoltaic battery chip is greatly improved, and the service lifetime of the photovoltaic battery chip is prolonged.

Description

technical field [0001] The application of the present invention relates to the technical field of photovoltaic solar energy, in particular to a photovoltaic cell chip and a manufacturing method thereof. Background technique [0002] Currently existing solar cells mainly include silicon-based solar cells and thin-film solar cells. A solar cell refers to a device that receives solar radiation, absorbs solar energy, and converts solar energy directly into electrical energy, including multiple PN junctions formed by P-type semiconductor materials and N-type semiconductor materials. Under the irradiation of light, there will be a concentration difference between electrons and holes at the interface of the PN junction. The holes in the N-type semiconductor move to the P region, and the electrons in the P region move to the N region, thus forming a transition from the N region to the P region. The current in the region, and then a potential difference is formed in the PN junction....

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Problems solved by technology

[0004] The invention of the present application provides a photovoltaic cell chip and its manufacturing method to solve the problem that in the prior art, part of the film layer of the photovoltaic cell chip is directly exposed to the air, which causes the characteristics of the cell chip to change, which seriously affects the service life of the photovoltaic cell chip and the photoelectric conversion. inefficiency

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