Gate pole turn-off thyristor and manufacturing method thereof

Abstract

The invention discloses a gate pole turn-off thyristor and a manufacturing method thereof. The gate pole turn-off thyristor comprises a first base region, a second base region, a third base region anda fourth base region which are sequentially formed from bottom to top and also comprises positive electrode metal, negative electrode metal and two gate pole metals, wherein the positive electrode metal is formed on a lower surface of the first base region, the negative electrode metal is formed on an upper surface of the fourth base region, the two gate pole metals are formed on an upper surfaceof the fourth base region and are respectively arranged at two sides of the negative electrode metal, the gate pole turn-off thyristor also comprises a first conductive type of heavy-doped buried layers and a first conductive type of heavy-doped injection regions, the injection regions are respectively formed below the two negative electrode metals, the buried layers are formed below the injection regions, the buried layers extend to the third base region from the upper surface of the third base region, and the injection regions penetrate through the fourth base region from the upper surfaceof the four base region. The invention also discloses a manufacturing method of the gate pole turn-off thyristor. The gate pole-turn-off thyristor has the advantages of small conduction voltage drop and specially short turn-off time.

Description

technical field [0001] The invention relates to the technical field of semiconductor discrete devices, in particular to a gate turn-off thyristor and a manufacturing method thereof. Background technique [0002] When an ordinary thyristor is used in a DC circuit, it can only be triggered to conduct with a positive gate signal, and cannot be turned off with a negative gate signal. In order to turn off the thyristors, a special commutation circuit must be set up, which leads to complex finishing circuits, increased volume and weight, increased energy consumption, and strong electrical noise. To this end, a thyristor with fast self-shutoff capability has been developed. This device can be turned on and off with the help of an applied positive or negative gate signal, which is called a gate turn-off thyristor. [0003] The basic structure of the turn-off thyristor is similar to that of ordinary thyristors. It is also a PNPN four-layer, three-junction, and three-terminal device....

AI Technical Summary

Problems solved by technology

[0004] Due to the technical limitations of the device structure and manufacturing process, the current conventional turn-off thyristor has too slow turn-off speed, and the turn-off efficiency can no longer meet the market demand.

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