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Grooved super junction power device

A power device, trench technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problem of long reverse recovery time, reduce reverse recovery charge and reverse recovery time, and achieve fast reverse recovery. Effect

Active Publication Date: 2019-05-14
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a trench-type super-junction power device with fast reverse recovery function, to solve the problem of trench-type super-junction power devices in the prior art caused by the problem of minority carrier injection. Technical issues with long reverse recovery times

Method used

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Embodiment Construction

[0035]In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below in a specific manner in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.

[0036] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the description ...

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Abstract

The embodiment of the invention provides a grooved super junction power device. The device comprises sources, a drain, first gates, second gates, body diodes, and p-body contact diodes, wherein each body diode is connected in series with the corresponding p-body contact diode; each first gate controls the on / off of a corresponding first current channel, which is controlled by the first gate, through a gate voltage; and each second gate is connected with the corresponding source, and controls the on / off of a corresponding second current channel, which is controlled by the second gate, through asource voltage. The grooved super junction power device provided by the invention has the advantages that when the device is off, reverse currents flowing through the body diodes can be greatly reduced, so that the number of minority carriers in the body diodes can be greatly decreased, and the grooved super junction power device can achieve a rapid reverse recovery function.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a trench type super junction power device with fast reverse recovery function. Background technique [0002] The cross-sectional structure of the trench type super junction power device in the prior art is as follows figure 1 As shown, it includes: an n-type drain region 31 and an n-type drift region 30 located on the n-type drain region 31, and the n-type drain region 31 is connected to the drain voltage through a drain metal contact layer 70; in the n-type drift region 30 At least two p-type columnar epitaxial doped regions 32 arranged in parallel are formed, and a p-type body region 33 is respectively formed on the top of each p-type columnar epitaxial doped region 32, and the p-type body region 33 and the n-type drift region 30 A parasitic body diode structure in a trench superjunction power device is formed between them. A p-type body contact region 38 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78
Inventor 刘磊袁愿林龚轶
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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