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A power mosfet device

A device and power technology, applied in the field of power MOSFET devices, can solve the problem of long reverse recovery time, and achieve the effect of reducing reverse current, reducing reverse recovery charge and reverse recovery time, and fast reverse recovery function

Active Publication Date: 2021-03-02
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the purpose of the present invention is to provide a kind of power MOSFET device with fast reverse recovery function, to solve the power MOSFET device in the prior art because of the technology that the reverse recovery time of minority carrier injection problem causes is longer question

Method used

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  • A power mosfet device
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Embodiment Construction

[0033] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below through specific implementation in combination with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.

[0034] It should be understood that terms such as "having", "comprising" and "including" used herein do not denote the presence or addition of one or more other elements or combinations thereof. At the same time, in order to clearly illustrate the specific implementation of the present invention, the schematic diagrams listed in the accompanying drawings of the ...

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Abstract

The present invention provides a power MOSFET device, comprising a source, a drain, a first gate, a second gate, a body diode and a body contact diode, the source, the drain, and the first gate form a first MOSFET structure, the source, drain, and second gate form a second MOSFET structure, the cathode of the body diode is connected to the drain, and the anode of the body contact diode is connected to the anode of the body diode , the cathode of the body contact diode is connected to the source, the first gate controls the opening and closing of the first current channel of the first MOSFET structure through the gate voltage, and the second The gate is connected to the source, and the second gate controls the opening and closing of the second current channel of the second MOSFET structure through the source voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a power MOSFET device with fast reverse recovery function. Background technique [0002] The equivalent circuit of a prior art power MOSFET device such as figure 1 As shown, it includes a drain 101 , a source 102 , a gate 103 , and a body diode 104 , wherein the body diode 104 is an intrinsic parasitic structure in a power MOSFET device. The gate of the power MOSFET device in the prior art controls the opening and closing of the current channel of the power MOSFET device through the gate voltage, and its working mechanism is: 1) when the gate-source voltage Vgs is less than the threshold voltage Vth of the power MOSFET device, When the drain-source voltage Vds is greater than 0V, the power MOSFET device is in the off state; 2) When the gate-source voltage Vgs is greater than the threshold voltage Vth of the power MOSFET device, and the drain-source voltage Vd...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/07H01L29/78
Inventor 刘磊袁愿林刘伟龚轶
Owner SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
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