MOSFET and power conversion circuit

A technology of positive charge density and area, applied in circuits, output power conversion devices, electrical components, etc., can solve problems such as large changes in switching characteristics

Active Publication Date: 2019-04-16
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in the conventional MOSFET900, if the charge balance around the gate fluctuates, there is a problem that the switching characteristics fluctuate greatly after turning off (Turn off).

Method used

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  • MOSFET and power conversion circuit
  • MOSFET and power conversion circuit
  • MOSFET and power conversion circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0055] 1. Configuration and operation of the power conversion circuit 1 according to the first embodiment

[0056] The power conversion circuit 1 according to the first embodiment is a chopper circuit as a component such as a DC-DC converter or an inverter. The power conversion circuit 1 related to the first embodiment is as figure 1 As shown, it includes: a reactor 10 ; a power supply 20 ; a MOSFET 100 related to Embodiment 1; and a rectifying element 30 .

[0057] The reactor 10 is a passive element capable of storing energy in a magnetic field formed by passing an electric current.

[0058] The power source 20 is a DC power source that supplies current to the reactor 10 . MOSFET 100 controls the current supplied to reactor 10 by power supply 20 . Specifically, the MOSFET 100 performs switch switching in response to a clock signal applied to the gate electrode of the MOSFET 100 by a driving circuit (not shown), and once it is in a conductive state, conduction between the...

Embodiment approach 2

[0147] MOSFET 102 according to Embodiment 2 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that it does not change the width at a predetermined depth position in the n-type columnar region. w n (x) and the width w at the specified depth position in the p-type columnar region p (x), but changes the positive charge density N d (x) and the density N of negative charges at a specified depth position in the p-type columnar region a (x). That is, in the MOSFET 102 according to Embodiment 2, as shown in FIG. 12 , the positive charge density N d (x) and the density N of negative charges at a specified depth position in the p-type columnar region 116 a When (x) is the vertical axis, the density N of the positive charge d (x) exhibits a convex monotonous upward curve to the right, and the density of the negative charge N a (x) exhibits a downwardly convex monotonous curve that droops to the rig...

Embodiment approach 3

[0151] MOSFET 200 according to Embodiment 3 basically has the same configuration as MOSFET 100 according to Embodiment 1, but differs from MOSFET 100 according to Embodiment 1 in that it is a trench gate MOSFET rather than a planar gate MOSFET. That is, in the MOSFET 200 related to the third embodiment, the semiconductor substrate 210 is as Figure 13 As shown, it has: a base region 218 formed on the surface of the first main surface of the semiconductor substrate 210, and formed on the entire surface of the p-type columnar region 216 and a part of the surface of the n-type columnar region 214; formed on The surface of the first main surface of the semiconductor base 210, and the n-type surface high-concentration region 219 adjacent to the base region 218 formed on the surface of the n-type columnar region 214, and the surface of the base region 218 In the n-type source region 220, the gate electrode 236 is formed on the surface of the base region 218 sandwiched by the source ...

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Abstract

This MOSFET 100 is characterized by being provided with: a semiconductor substrate 110 provided with a super junction structure 117; and a gate electrode 126 formed on a first main surface side of thesemiconductor substrate 110 with a gate insulating film 124 therebetween. The MOSFET 100 is further characterized in that, when the depths x of positions at prescribed depths of the super junction structure 117 are plotted on the horizontal axis, and the average positive charge densities p(x) in the positions at the prescribed depths of the super junction structure 117 are plotted on the verticalaxis, the average positive charge densities p(x) in the positions at the prescribed depths of the super junction structure 117 when the MOSFET is turned off and the super junction structure 117 is depleted, are represented by an upwardly convex curve which rises upwards and to the right. According to this MOSFET 100, variation in the switching characteristics when turned off can be reduced in comparison to the prior art, even if there is variation in the charge balance around the gate.

Description

technical field [0001] The present invention relates to MOSFETs and power conversion circuits. Background technique [0002] Conventionally, a MOSFET having a semiconductor base having a superjunction structure composed of n-type column regions and p-type column regions has been widely known (for example, refer to Patent Document 1). [0003] In this specification, the super junction structure refers to a structure in which n-type columnar regions and p-type columnar regions are alternately and repeatedly arranged when viewed from a predetermined cross section. [0004] Conventional MOSFET900 such as Figure 17 As shown, it is a planar gate (Plane gate) type MOSFET, which includes: a semiconductor substrate 910, with a super junction structure 917 composed of an n-type columnar region 914 and a p-type columnar region 916, formed on the first main The surface of the surface, and the base region 918 formed on the entire surface of the p-type columnar region 916 and a part of ...

Claims

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Application Information

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IPC IPC(8): H01L29/78
CPCH01L29/0634H01L29/0878H01L29/0886H01L29/1608H01L29/7802H01L29/7813H01L29/0856H01L29/0873H01L29/772H01L29/7812H01L29/872H02M3/155
Inventor 新井大辅北田瑞枝
Owner SHINDENGEN ELECTRIC MFG CO LTD
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