Emitter structure of double-layer amorphous silicon doped layer solar cell and preparation method thereof

Abstract

The invention relates to an emitter structure of a double-layer amorphous silicon doped layer solar cell and a preparation method of the emitter structure. The structure comprises an N-type crystal silicon wafer, wherein amorphous silicon intrinsic layers are arranged on the front surface and the back surface of the N-type crystal silicon wafer; TCO conductive films are arranged on the outer sidesof the amorphous silicon intrinsic layers; a plurality of Ag electrodes are arranged on the outer side of the TCO conductive film; two amorphous silicon doping layers with different doping concentrations are arranged between the amorphous silicon intrinsic layer and the TCO conducting film on the back face, namely the first doping layer and the second doping layer, the first doping layer is arranged on the side close to the amorphous silicon intrinsic layer, and the second doping layer is arranged on the side close to the TCO conducting film. The amorphous silicon doped layer of the backlightsurface adopts double amorphous silicon doped layers, 0.5%-1% doping concentration is adopted in the first layer, and 1%-4% doping concentration is adopted in the second layer, so that the conductivity of the thin film is improved, the transmittance of the thin film is not reduced, and the photoelectric conversion efficiency of the HJT solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of high-efficiency photovoltaic cells, in particular to an emitter structure of a double-layer amorphous silicon doped layer solar cell and a preparation method thereof. Background technique [0002] With the rapid development of photovoltaic technology, the conversion efficiency of crystalline silicon solar cells is increasing year by year. In the current photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cells has reached more than 20%, and the conversion efficiency of polycrystalline silicon solar cells has reached more than 18.5%. However, the silicon-based solar cells produced on a large scale and with a conversion efficiency of more than 22.5% are only the Interdigitated Back Contact (IBC) solar cells of SunPower of the United States and the amorphous silicon / crystalline silicon with intrinsic thin layers of Panasonic of Japan. Heterojunction with Intrinsic Thin layer (H...

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Problems solved by technology

[0005] see figure 1 , the existing technology is a single-layer amorphous silicon doped layer P, wherein the doping ratio of B2H6 doping is 1%-3%; the amorphous silicon doped layer has a contradictory relationship between transmittance and conductivity, through If the conductivity is high, the conductivity will be poor, and if the conductivity is high, the transmittance will be low. Therefore, a single layer of B2H6 doped amorphous silicon cannot achieve high conversion efficiency of HJT cells.

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