Trench type power semiconductor element and manufacturing method thereof
A technology of power semiconductors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing component reliability, increasing electric field, reducing the withstand voltage of trench power metal oxide half field effect transistors, etc. problem, to achieve high reliability, high gate withstand voltage effect
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[0078] The following is an illustration of the implementation of the "trenched power semiconductor element and its manufacturing method" disclosed in the present invention through specific specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope o...
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