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Silicon carbide device terminal structure and manufacturing method thereof

A technology of terminal structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as surface breakdown, and achieve the effects of reducing requirements, solving surface breakdown, and improving reliability.

Active Publication Date: 2019-03-29
北京国联万众半导体科技有限公司
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  • Application Information

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Problems solved by technology

[0005] Based on this, the present invention provides a silicon carbide device terminal structure and its manufacturing method, which are used to solve the problem that the existing silicon carbide device terminal structure is prone to surface breakdown

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  • Silicon carbide device terminal structure and manufacturing method thereof
  • Silicon carbide device terminal structure and manufacturing method thereof
  • Silicon carbide device terminal structure and manufacturing method thereof

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Embodiment Construction

[0064] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0065] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0066] see figure 1 , an embodiment of the present invention provides a silicon carbide device terminal structure, including an N+ type SiC substrate 100, a first N-type epitaxial layer 200, a second N-type epitaxial layer 300, a first P-type main junction 400, The P-type terminal 500 , the second P-type main junction 600 , the first electrode layer 700 and the second electrode layer 800 . Wherein, the first electrode la...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a silicon carbide device terminal structure and a manufacturing method thereof. The silicon carbide device terminal structure comprises an N+ type SiC substrate, a first N- type epitaxial layer, a second N- type epitaxial layer, a P-type main junction, a P-type terminal, a second P-type main junction, a first first electrode layer and a second electrode layer. The P-type electrode is disposed at a position, far away from the surface, in the first N- type epitaxial layer, and enables a peak electric field to be located in a SiC material when the silicon carbide device is reversely biased, so that the problem that surface breakdown easily occurs in a terminal structure of an existing silicon carbide device can be solved. Meanwhile, the requirements for the interface quality of SiC and a passivation medium can be lowered, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon carbide device terminal structure and a manufacturing method thereof. Background technique [0002] Silicon carbide (SiC) is a wide-bandgap semiconductor material. Compared with silicon (Si), which is widely used in the semiconductor field, the bandgap width of SiC material is about 3 times that of Si material, and the electron saturation rate is 2 times that of Si material. , The thermal conductivity is 2.5 times that of Si material, and the peak breakdown electric field is 10 times that of Si material. Therefore, high-voltage power devices based on SiC materials have better electrical and thermal performance than traditional silicon devices, and can meet more demanding application environments. At present, 600V-1700V SiC diodes and metal oxide semiconductor field effect transistors (MOSFETs) have formed commercial products, and have been widely recognized and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/04
CPCH01L29/0619H01L21/0445
Inventor 王永维马杰吕树海王国清张力江
Owner 北京国联万众半导体科技有限公司
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