Silicon carbide device terminal structure and manufacturing method thereof
A technology of terminal structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as surface breakdown, and achieve the effects of reducing requirements, solving surface breakdown, and improving reliability.
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[0064] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0065] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0066] see figure 1 , an embodiment of the present invention provides a silicon carbide device terminal structure, including an N+ type SiC substrate 100, a first N-type epitaxial layer 200, a second N-type epitaxial layer 300, a first P-type main junction 400, The P-type terminal 500 , the second P-type main junction 600 , the first electrode layer 700 and the second electrode layer 800 . Wherein, the first electrode la...
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