Three-dimensional integrated circuit heat dissipation system using TSV and RDL

Abstract

The invention discloses a three-dimensional integrated circuit heat dissipation system using TSV and RDL. The three-dimensional integrated circuit comprises a bonding layer, a silicon substrate and anactive region which are sequentially stacked. The system is characterized in that a surface of the silicon substrate is deposited with a dielectric layer. A metal line for absorbing heat of the active region is deposited in the dielectric layer. A thermal conduction silicon through-hole connected to the metal line is disposed in the silicon substrate and the dielectric layer, and the thermal conduction silicon through-hole vertically passes through the dielectric layer. Through arranging the metal line and the thermal conduction silicon through-hole in a three-dimensional integrated circuit,the heat dissipation system makes heat dissipation of the three-dimensional integrated circuit uniform, so as to reduce internal temperature gradient of a chip, and improving performance stability ofthe three-dimensional integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional integrated circuit heat dissipation, and in particular relates to a three-dimensional integrated circuit heat dissipation system using TSV and RDL. Background technique [0002] With the continuous development of the integrated circuit industry, the size of microelectronic devices continues to decrease in accordance with Moore's Law, and the degree of integration continues to increase. Nowadays, planar integrated circuits can no longer meet the needs of further reduction in device size, and three-dimensional integrated circuits have emerged as the times require. The three-dimensional integrated circuit adopts chip stacking technology, which effectively saves space. Using redistribution layer (RDL) technology, metal layers and dielectric layers are deposited on the surface of the wafer to form corresponding metal wiring, which improves the internal circuit layout. Through silicon vias (TS...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a three-dimensional integrated circuit heat dissipation system using TSV and RDL to solve the problems of uneven heat dissipation and excessive internal temperature gradient of the existing three-dimensional integrated circuit

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