Power Devices and Appliances

Abstract

The application discloses a power device and an electric appliance. The power device comprises an SS input terminal, first to third upper bridge-arm switch tubes, first to third lower bridge-arm switch tubes, a UH drive circuit, a VH drive circuit, a WH drive circuit, and UL / VL / WL drive circuits for driving the first to third lower bridge-arm switch tubes. The UH drive circuit, the VH drive circuit, and the WH drive circuit are connected with the SS input terminal and drive the first to third upper bridge-arm switch tubes respectively. When the SS input terminal is at a first level, the UH drive circuit, the VH drive circuit, and the WH drive circuit as well as the UL / VL / WL drive circuits output high-low-level signals in a first voltage range; when the SS input terminal is at a second level, the UH drive circuit, the VH drive circuit, and the WH drive circuit as well as the UL / VL / WL drive circuits output high-low-level signals in a second voltage range; and when the SS input terminal is at a third level, the UH drive circuit, the VH drive circuit, and the WH drive circuit as well as the UL / VL / WL drive circuits output high-low-level signals in a third voltage range. Therefore, the adaptability of the silicon, gallium-nitride, and silicon carbide intelligent power modules is improved.

Description

Technical field [0001] This application relates to the technical field of electrical appliances, and in particular to a power device and an electrical appliance with the power device. Background technique [0002] Intelligent power module, IPM (Intelligent Power Module), is a power drive product (power device) that combines power electronics and integrated circuit technology. Smart power modules integrate power switching devices (such as GaN (gallium nitride) devices, Si (silicon) devices or SiC (silicon carbide) devices) and high-voltage integrated circuits, and contain overvoltage, overcurrent, and overheating. Fault detection circuit. On the one hand, the intelligent power module receives the control signal of the MCU (Micro Controller Unit) to drive the subsequent circuit to work, and on the other hand, it sends the state detection signal of the system back to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasingly large mar...

AI Technical Summary

Problems solved by technology

Replacing Si devices with GaN devices or SiC devices is an effective way to reduce the power consumption of intelligent power modules, but it also brings new problems because the threshold voltages of GaN devices or SiC devices and Si devices are different. Generally speaking, GaN The threshold voltage of the device is lower than that of the Si device. If the same high-voltage integrated circuit is used for driving, the gate of the GaN device will be broken down. The threshold voltage of the SiC device is higher than that of the Si device. If the same high-voltage integrated circuit is used for driving, It is bound to cause the conduction process of SiC devices to be incomplete, and the low power consumption advantages of SiC cannot be brought into play, or even have the opposite effect. However, if different high-voltage integrated circuits are used for driving, it will cause material damage during the production process. The difficulty of organization and the risk of mixing materials will increase the cost of smart power modules accordingly. Moreover, if the high-voltage integrated circuits driving Si devices need to use lower voltage for power supply in order to ensure that GaN devices are not broken down, this will inevitably As a result, the power consumption of the entire Si intelligent power module is increased, and even the Si device cannot work. As far as the circuit is concerned, this voltage will be so low that the high-voltage integrated circuit cannot work normally, which is not universal. If the high-voltage integrated circuit driving the SiC device is powered by a higher voltage, it will inevitably cause the power consumption of the entire intelligent power module. Improvement, which offsets the power drop of SiC devices, reduces the effect of reducing power consumption of intelligent power modules using SiC devices, and if a higher voltage is used to supply power to high-voltage integrated circuits that drive SiC devices, it is necessary to improve the peripheral electronic control scheme This will undoubtedly increase the resistance to intelligent power modules equipped with SiC devices. Moreover, this high voltage has already exceeded the withstand voltage of GaN devices and cannot be used universally for GaN devices.

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