GaN laser bar cleavage method

Abstract

The invention discloses a GaN laser bar cleavage method, belonging to the technical field of semiconductor optoelectronic devices. According to the method, deep etching of wide cleavage guide groovesand V-shaped narrow guide grooves is carried out so that the etching depth can penetrate the entire epitaxial layer, then back thinning, etching, electrode growth processes are carried out, and then cleavage is carried out on the front surface of a sample by means of laser cutting and a Loomis cleavage machine roller, so that a bar cavity surface is obtained. The aim is to provide stronger directivity for bar dissociation, greatly improve the success rate of bar dissociation and generate a smoother cavity surface. The GaN laser bar cleavage method can be applied to the production and manufacturing field of gallium nitride lasers.

Description

technical field [0001] The invention relates to a bar cleavage method of a gallium nitride-based semiconductor laser, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Gallium nitride-based lasers refer to devices that use GaN materials as the basic working substance to generate laser light. Its main working principle is to achieve the particle number of non-equilibrium carriers between the energy band of the GaN material system and the energy level of impurities (acceptor or donor) through certain excitation methods (electrical injection, optical pumping, etc.). Inversion, when a large number of electrons and holes in the state of particle population inversion recombine, stimulated emission occurs. The high-power gallium nitride laser and DFB (distributed feedback) laser based on the F-P cavity both adopt the edge-emission active region light output mode, and use the natural cleavage surface of the semiconductor crystal...

AI Technical Summary

Problems solved by technology

However, the dissociation method of laser end face cutting + splitter often has the situation that the dissociation direction does not follow the direction of the dissociation groove, the success rate of cleaving is not high, and it is easy to form bad stripes on the cavity surface, and extend to the existing Source region, which affects the optoelectronic performance of the laser

In addition, due to the poor cutting accuracy of the diamond knife jumping cutting + roller method, the dissociation surface often deviates from the expected guide groove, and small-area, high-density steps are prone to appear on the cavity surface of the bar, and the diamond is cutting During the process, due to its mechanical pressure, it is easy to form harmful cracks in the high-strain epitaxial layer next to the guide groove, thus affecting the final performance of the laser

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