Method and device for detecting patterned substrates

Abstract

The invention discloses a method and a device for detecting substrates which are subjected to patterning processing. The method includes defining a plurality of independent annular regions from the centers to the edges of patterned surfaces of the to-be-analyzed substrates; selecting a light source, allowing light beams to irradiate on the substrates and acquiring reflectivity values or light transmittance values of a plurality of locations in each annular region of each substrate by optical measurement instruments; computing a plurality of reflectivity or light transmittance average values ordeviation values according to the multiple internal reflectivity values or the multiple internal light transmittance values of each annular region by the aid of a control unit, comparing the multiplereflectivity average values or the multiple light transmittance average values and the multiple deviation values to thresholds of the reflectivity or the light transmittance and deviation values of preset target substrates one by one and judging whether to-be-detected wafers and target wafers are qualified or not.

Description

technical field [0001] A method and device for inspecting patterned substrates, in particular to a method and device for transparent patterned substrates. Background technique [0002] In the field of sapphire patterned substrates, manufacturers used to use 3D microscopes or manual visual inspection to sort the produced sapphire substrates in terms of size. However, the single-chip scanning time of the 3D microscope is too long to meet the continuous production of large quantities; and manual visual inspection is likely to cause different sorting standards due to individual differences in people. The current sorting method has evolved to be realized by detecting the reflectivity of the sapphire patterned substrate. The reflectivity detection of the substrate is generally analyzed using a reflectivity test device. The detection principle is to irradiate a patterned substrate with a light beam. Obtain the reflectance value and calculate the mean and standard deviation value, ...

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Problems solved by technology

And when the quality deviation of some local areas of the patterned substrate is too large, the quality of other areas is good, such as figure 2 The average value of the reflectance and the standard deviation obtained by the detection method shown cannot reflect the quality deviation of the local area

In addition, the current substrate often has a large difference in quality from the center to the edge. During the epitaxial growth process, this quality difference will warp to the edge, and the area near the center will be depressed, forming a bowl-shaped uneven phenomenon.

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