A method for extracting parasitic parameters of a silicon carbide inverter

Abstract

The invention discloses a method for extracting parasitic parameters of a silicon carbide inverter, which comprises the following steps of obtaining physical structure parameters of the silicon carbide inverter, and thereby establishing a three-dimensional model of the inverter, thereby obtaining a basic three-dimensional model; setting the material properties of conductor, current inflow positionand current outflow position in the basic three-dimensional model; simulating circuit operation to extract parasitic inductance and parasitic resistance; setting the material properties of the conductor in the basic three-dimensional model, and setting the voltage difference between the positive DC bus and the reference ground, the negative DC bus and the reference ground, and the voltage difference between the middle point of each bridge arm of the inverter and the heat sink respectively; and simulating circuit operation to extract parasitic capacitance. The methd of the invention can accurately extract the parasitic parameters of the inverter through a software simulation method in the design process of the inverter, so as to reduce the production cost and shorten the manufacturing period.

Description

technical field [0001] The invention belongs to the field of inverters, and more specifically relates to a method for extracting parasitic parameters of a silicon carbide inverter. Background technique [0002] Wide bandgap semiconductor silicon carbide (SiC) power devices have the advantages of high power density, low switching loss, suitable for high-frequency operation, and good high-temperature stability. In the past ten years, SiC power electronic devices have developed rapidly. Mainstream semiconductor manufacturers have Invest in related research and development and production. However, due to the fast switching speed of silicon carbide devices, the resulting spike voltage may affect the driving signal, and even endanger equipment and personal safety. Therefore, it is necessary to extract the parasitic parameters inside the inverter, and then determine the measures to reduce the parasitic parameters to improve electromagnetic compatibility. [0003] At present, the ...

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Problems solved by technology

[0003] At present, the parasitic parameters of the inverter are often measured by instruments such as impedance analyzers after the finished inverter is processed, but no corresponding measures are taken to accurately extract the parasitic parameters of the inverter during the design process. This will not only increase the production cost, but also Increase the chance of rework, thereby extending the production cycle

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