Organic Electroluminescent Devices
An electroluminescent device and electroluminescent technology, applied in the display field, can solve problems such as low current efficiency, and achieve the effects of improving current efficiency, improving recombination area, and reducing driving voltage
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Embodiment 1
[0058] The structure of the organic electroluminescent device provided by this implementation is: ITO (20nm) / formula (I-1): F4TCNQ (4wt%, 20nm) / formula (II-1) (76nm) / AND: perylene (3wt%, 30nm) / Bphen(25nm) / Ag(16nm) / Alq3(65nm).
[0059] Wherein, ITO: indium tin oxide, is the first electrode;
[0060] AND: 9,10-bis(2-naphthyl)anthracene, a dopant material for the light-emitting layer;
[0061] Perylene: perylene, which is the main material of the light-emitting layer;
[0062] Bphen: 4,7-diphenyl-1,10-phenanthroline, an electron transport layer material;
[0063] Ag: silver, is the second electrode;
[0064] Alq3: Tris(8-hydroxyquinoline)aluminum, which is an optical coupling layer.
[0065] The first hole transport material is formula (I-1), the P-type dopant material is F4TCNQ, the ratio of the mass of the P-type dopant material to the mass of the first hole transport material is 4:100; the hole injection layer 30 The thickness of the hole transport layer 40 is 20 nm; the ...
Embodiment 2
[0076] This embodiment provides an organic electroluminescence device, the specific structure is the same as that of Embodiment 1, the difference is that the first hole transport material is formula (I-1), the P-type dopant material is F4TCNQ, and the hole injection layer 30 The thickness of the hole transport layer 40 is 10 nm, the doping concentration of the P-type dopant material is 8%; the second hole transport material is formula (II-2), and the thickness of the hole transport layer 40 is 86 nm.
Embodiment 3
[0078] This embodiment provides an organic electroluminescent device, the specific structure is the same as that of Embodiment 1, the difference is that the first hole transport material is formula (I-2), the P-type dopant material is F4TCNQ, and the hole injection layer 30 The thickness of the hole transport layer 40 is 10 nm, the doping concentration of the P-type dopant material is 4%; the second hole transport material is formula (II-3), and the thickness of the hole transport layer 40 is 86 nm.
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