Uniform gas supply device for vapor deposition furnace, and vapor deposition furnace

Abstract

The invention discloses a uniform gas supply device for a vapor deposition furnace, and the vapor deposition furnace. The uniform gas supply device for the vapor deposition furnace comprises one or more T-shaped gas uniformizing pipelines, and the directions of gas outlet holes of the gas uniformizing pipelines are opposite to the ascending direction of reactive gas, and the gas outlet holes are back on to workpieces. According to the uniform gas supply device for the vapor deposition furnace, design is ingenious, by setting the directions of the gas outlet holes, the reactive gas can be gradually spread to the workpiece area after flowing out, the problems that when one gas outlet supplies gas to the workpieces directly, gas flow impact is prone to being caused, the reactive gas is proneto being concentrated in a certain area, and consequently the reactive gas is distributed nonuniformly are avoided, the supplying uniformity of the reactive gas can be ensured, and the quality of filmdeposition is improved advantageously.

Description

technical field [0001] The invention relates to the field of vapor deposition equipment, in particular to a uniform gas supply device for a vapor deposition furnace and a vapor deposition furnace. Background technique [0002] Chemical Vapor Deposition (CVD) refers to the process of introducing the gaseous or liquid reactant vapor and other gases required for the reaction into the deposition chamber, and a chemical reaction occurs on the substrate surface to form a thin film. [0003] The CVD chemical vapor deposition furnace uses the principle of chemical vapor deposition (Chemical Vapor Deposition) to heat the substances involved in the chemical reaction to a certain process temperature, and under the gravitational force generated by the vacuum pump pumping system, it is led to the deposition chamber for reaction and deposition. , to generate a new solid thin film substance. [0004] The traditional vertical CVD furnace adopts an air inlet at the bottom and an air outlet ...

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Problems solved by technology

[0005] Since the reaction gas rushes directly to the workpiece from the bottom of the deposition chamber, the impact force of the gas flow generated when it gushes out is relatively high, and the gas flow rate is relatively fast, which is not conducive to sufficient contact reaction with the workpiece, and is also easy to cause impact on the gas atmosphere in the deposition chamber; And after the reaction gas gushes out, it is easy to concentrate in the middle area of ​​the deposition chamber, resulting in uneven distribution of the reaction gas, which is not conducive to the adequacy of the contact between the workpiece near the wall of the deposition chamber and the reaction gas, and cannot guarantee the consistency of the product in the same deposition process sex

[0006] At the same time, the structure of an air inlet cannot adjust the supply of reaction gas at the corresponding position according to the difference in the coating quality of the product at different positions, and the adjustability is poor.

[0007] In addition, the conventional reaction gas supply pipeline usually introduces the carrier gas into the liquid reaction source heated by the water bath, and the evaporated reaction source is driven by the carrier gas into the deposition chamber. The calculation method is used to control, not the direct quantitative value. The supply of the reaction source is controlled by the temperature of the water bath, the gas pressure in the bubbling bottle, the vapor pressure of the organic metal source and other parameters. There are many influencing factors and higher control requirements. , is more complicated. In addition, the output of the reaction source is affected by the supply of carrier gas, and the supply of the reaction source is relatively limited.

[0008] At the same time, in the existing vapor deposition furnace, the workpiece cannot be moved when it is placed on the substrate support, or it has a turntable mechanism to make the workpiece suspended on the hanger or lying flat on the substrate support carry out revolution and / or rotation, so as to realize uniformity of deposition

[0009] However, these structures are not suitable for disc-like workpieces that require full-surface deposition, mainly because: during the deposition process, there are more or less certain contact areas between the substrate holder or the hanger and the disc-like parts, and these The covered areas can never be deposited into a film. If these areas are to be deposited into a film, the deposition process must be stopped, and the position of the workpiece on the hanger or fixture must be adjusted so that the covered part of the workpiece is exposed, and then deposited. Realize one-time full surface deposition, cumbersome operation

[0010] Moreover, even after adjusting the position of the workpiece on the substrate holder or hanger, other areas will be blocked when the deposition continues, which will cause differences in the thickness of the film layer between the blocked area and the non-shielded area, resulting in the final deposition. The film still has the problem of unevenness, which affects the quality of the film

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