Novel 3D NAND memory device and method of forming same
A device and storage unit technology, applied in the field of three-dimensional storage devices and vertical 3DNAND storage devices, can solve the problems of complex manufacturing process of 3DNAND storage devices, and achieve the effect of reducing channel resistance
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[0017] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not meant to be limiting. For example, forming a first feature on or over a second feature in the description below may include embodiments in which the first and second features are features that are formed in direct contact, and may also include embodiments in which the first feature and the second feature may be formed in direct contact. An embodiment in which an additional feature is formed between a first feature and a second feature such that the first feature and the second feature may not be in direct contact. Also, the present disclosure may reuse numbers and / or letters in reference numerals in various examples. This repetition is for the purposes of simplicity and clarity...
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