Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive random access memory and manufacturing method thereof

A technology of a resistive memory and a manufacturing method, applied in the field of memory, can solve problems such as uneven electric field of the resistive memory, and achieve the effects of avoiding uneven electric field and improving reliability

Active Publication Date: 2019-03-01
ZHUHAI CHUANGFEIXIN TECH CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the technical solution of the present invention provides a resistive variable memory and its manufacturing method, which solves the problem of uneven electric field of the resistive variable memory and improves the reliability of its storage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0048] refer to figure 1 , figure 1 It is a structural diagram of a conventional RRAM, including a substrate 11, the surface of the substrate 11 has a first electrode 12, the surface of the second electrode is provided with an insulating dielectric layer 13, and the insulating dielectric layer 13 has a through hole exposing part of the first electrode 12 , the surface of the insulating medium 13 and the sidewall and bottom of the through hole are covered with...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The technical scheme of the invention discloses a resistive random access memory and a manufacturing method thereof. According to the technical scheme, a functional layer located outside a through hole is removed; and one side surface, deviating from a substrate, of an insulating dielectric layer does not cover the functional layer, so that the problem that the electric field is uneven due to thefact that the function layer is arranged outside the through hole is avoided, and the reliability of the resistive random access memory is improved.

Description

technical field [0001] The present invention relates to the technical field of memory, and more specifically, relates to a resistive variable memory and a manufacturing method thereof. Background technique [0002] Memory is a memory device used to save information in modern information technology. Its main function is to store various data and programs. It usually uses physical devices (storage units) with two stable states (represented as "0" and "1") ) to realize the storage function. With the array composed of a large number of storage units as the core, plus the necessary address decoding, read and write control circuits, it is a storage integrated circuit; plus the necessary I / O interface and some additional circuits such as access strategy management, then A memory chip is formed. In the integrated circuit industry, semiconductor memory is quite important, and is widely used in information, security, national defense and other fields. The development of technologie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/841H10N70/011
Inventor 田敏李立王志刚
Owner ZHUHAI CHUANGFEIXIN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com