QLED device with graphene oxide interfacial layer and preparation method thereof

Abstract

The present invention discloses a QLED device with graphene oxide interfacial layer and a preparation method thereof. The QLED device with the graphene oxide interfacial layer includes a substrate, abottom electrode, a first functional layer, a quantum dot luminescent layer, a second functional layer, and a top electrode, wherein the substrate, the bottom electrode, the first functional layer, the quantum dot luminescent layer, the second functional layer, and the top electrode are sequentially stacked. Graphene oxide interfacial layers with functionalized functional groups are included between the first functional group and the quantum dot luminescent layer, and / or between the quantum dot luminescent layer and the second functional layer. By adding the oxide interfacial layers with functionalized functional groups between the quantum dot luminescent layer and the functional layers, the quantum dots and the nanoparticles in the functional layers can be closely anchored by electrostatic interaction or bonding, thereby effectively improving the interface structure between the luminescent layer and the functional layers, passivating interface defects, and effectively improving the performance of the QLED device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a QLED device with a graphene oxide interface layer and a preparation method thereof. Background technique [0002] Quantum dot (Quantum dot) is a quasi-zero-dimensional nanomaterial, similar to superlattice and quantum well, its particle size is about 1~100 nm, it has quantum confinement effect, surface effect, quantum size effect and quantum tunneling effect, etc. Performance, and outstanding advantages such as good monochromaticity, high color purity, narrow luminescence spectrum, etc., it is a very promising nanomaterial. Light-emitting diodes based on quantum dots are called quantum dot light-emitting diodes (Quantum dots light-emitting diode, QLED), which is a new type of display device. The advantages of quantum dot display are wide color gamut coverage, easy color control, and high color purity. It is considered to be a new star in display technology, and it is also con...

AI Technical Summary

Problems solved by technology

In the device preparation methods of the prior art, quantum dots and metal oxide nanoparticles are relatively large in size compared with ordinary ions or small organic molecules, and if ligands fall off or other reasons, they are likely to cause agglomeration or sedimentation, which greatly affects their composition. Film uniformity and film coverage

In addition, uneven quantum dot light-emitting layer or uneven metal oxide carrier transport layer will cause the interface between the two to be uneven or have a large number of defects, which greatly affects the device performance and uniformity of light emission.

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