Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Prototype of sapphire ultra-high temperature pressure sensor and preparation method thereof

A pressure sensor, sapphire technology, used in the measurement of fluid pressure, fluid pressure measurement using capacitance changes, fluid pressure measurement using inductance changes, etc.

Active Publication Date: 2019-02-05
江西伟嘉晶创光电科技有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing high-temperature pressure sensors are mainly based on materials such as silicon, SOI, silicon carbide, and ceramics. The signal is read mainly through electrical leads. The material properties of the sensor and the signal reading method limit its working temperature range and cannot be used for a long time. stable realization The in-situ dynamic test of pressure parameters in the above ultra-high temperature environment still has a large gap compared with the application of high temperature and harsh environment in the manufacture of large equipment such as advanced engines and gas turbines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Prototype of sapphire ultra-high temperature pressure sensor and preparation method thereof
  • Prototype of sapphire ultra-high temperature pressure sensor and preparation method thereof
  • Prototype of sapphire ultra-high temperature pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the objects and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] Such as figure 1 and Figure 8 As shown, the embodiment of the present invention provides a prototype of a sapphire ultra-high temperature pressure sensor, which is divided into a high temperature zone, a heat insulation zone and a low temperature zone, including a sapphire passive high temperature resistant pressure sensitive element, a long-distance wireless transmission module, and a characteristic signal wireless Read the storage module, the sapphire passive high-temperature resistant pressure sensitive element is provided with a sensitive sealed cavity 1, and the outer end of the sensitive sealed cavity 1 is equipped with a heat-res...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a prototype of a sapphire ultra-high temperature pressure sensor. The prototype of the sapphire ultra-high temperature pressure sensor comprises a sapphire passive high-temperature-resistant voltage-sensitive element, a long-distance wireless transmission module and a characteristic signal wireless reading and storing module, wherein an anti-thermal impact plate is arrangedat one end of the outer side of the pressure sensor prototype, and a heat dissipation plate is installed at the other end of the pressure sensor prototype; the sapphire passive high-temperature-resistant voltage-sensitive element is installed on one side inside the pressure sensor prototype; the sapphire passive high-temperature-resistant voltage-sensitive element is composed of a high-temperature-resistant sensitive capacitor and a high-temperature wireless transmission inductance coil; a high-temperature-resistant thermal insulation material layer is arranged between the passive high-temperature-resistant pressure-sensitive element and the long-distance wireless transmission module; and a high-temperature-resistant test antenna is installed in the characteristic signal wireless readingand storing module. The passive high-temperature-resistant pressure-sensitive module of the sensor prototype can work at a super-high temperature environment of 1,200 DEG C or above, and the wirelessreading and storing module works in a high-temperature environment so as to realize in-situ testing of the characteristic signals in the ultra-high-temperature environment.

Description

technical field [0001] The invention relates to the field of sensor prototypes, in particular to a sapphire ultra-high temperature pressure sensor prototype and a preparation method thereof. Background technique [0002] With the continuous development of large-scale equipment such as advanced aero-engines and gas turbines, the requirements for monitoring and testing capabilities of working parts in ultra-high temperature environments are increasing. The testing of pressure parameters in the above ultra-high temperature environment has gradually become the key technical "bottleneck" restricting the manufacture of these large equipment. Existing high-temperature pressure sensors are mainly based on materials such as silicon, SOI, silicon carbide, and ceramics. The signal is read mainly through electrical leads. The material properties of the sensor and the signal reading method limit its working temperature range and cannot be used for a long time. stable realization The ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/10G01L9/12G01L19/06G01L19/08
CPCG01L9/10G01L9/12G01L19/0609G01L19/0672G01L19/0681G01L19/086
Inventor 李晨熊继军
Owner 江西伟嘉晶创光电科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products