An all-n-type four-phase clock charge pump

Abstract

The invention discloses an all-N type four-phase clock charge pump, which comprises a driving circuit and a control circuit, wherein the driving circuit is used for completing step-by-step transfer and accumulation of charge and includes a second transistor, a fourth transistor, a sixth transistor, an eighth transistor, a tenth transistor, a second capacitor, a fourth capacitor, a sixth capacitor,an eighth capacitor and a tenth capacitor; and the control circuit is used for improving the charge transfer efficiency and includes a first transistor, a third transistor, a fifth transistor, a seventh transistor, a ninth transistor, an eleventh transistor, a first capacitor, a third capacitor, a fifth capacitor, a seventh capacitor, a ninth capacitor and an eleventh capacitor. The all-N type four-phase clock charge pump constructs a threshold eliminating structure of the four-phase clock charge pump through sampling output level voltage so as to achieve the purposes of eliminating the threshold loss and improving the output voltage.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to an all-N type four-phase clock charge pump. Background technique [0002] At this stage, charge pumps have been widely used in many analog circuits. In many applications, the charge pump requires high step-up or step-down efficiency, and the most popular charge pump is a four-phase clock charge pump. [0003] In recent years, new oxide thin film transistor devices have become popular research objects because of their excellent performance and simple manufacturing process. However, the current oxide thin film transistors are N-type devices, and there is a problem of lack of complementary P-type devices. As a result, the four-phase clock charge pump composed of N-type tubes cannot solve the problem that the output stage adopts the diode connection method. Contents of the invention [0004] The purpose of the present invention is to overcome the deficiencies of t...

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Problems solved by technology

[0003] In recent years, new oxide thin film transistor devices have become popular research objects due to their excellent performance and simple manufacturing process. However, the current oxide thin film transistors are N-type devices, and there is a problem of lack of complementary P-type devices. As a result, the four-phase clock charge pump composed of N-type tubes cannot solve the problem that the output stage adopts diode connection.

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