Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A pixel unit and its preparation method

A pixel unit and epitaxial layer technology, applied in the field of pixel unit and its preparation, can solve the problems of large trench width, high cost, complex process, etc., and achieve the effects of reducing area waste, increasing fill factor, and simplifying the process

Active Publication Date: 2021-06-01
NINGBO ABAX SENSING ELECTRONICS TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies in the prior art, the purpose of the present invention is to provide a pixel unit and its preparation method to solve the problems of large groove width, complicated process and high cost in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A pixel unit and its preparation method
  • A pixel unit and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] This embodiment provides a method for preparing a pixel unit, including the following steps:

[0041] Step 1, injecting P-type material into the P-type epitaxial layer around the edge of the pixel unit to form an isolation region;

[0042] In this embodiment, in order to prevent the preparation of the isolation region from affecting the shape of the N-type doped region of the photodiode, this embodiment uses three implants to keep the concentration of the P-type material uniform from top to bottom.

[0043] Wherein, the P-type material is an ion of a group III element or a compound of an ion of a group III element, such as boron ion.

[0044] Specifically include the following steps:

[0045] The first time: the energy of injecting P-type material is 150keV~300keV, and the dose of injecting P-type material is 5×10 11 cm -2 ~1.5×10 12 cm -2 , the inclination when injecting P-type material is 0°~2°;

[0046] The second time: the energy of injecting P-type material i...

Embodiment 2

[0085] This embodiment provides a pixel unit, such as figure 1 , 2 As shown, it includes a P-type substrate 1 and a P-type epitaxial layer 2 arranged above the P-type substrate 1, and the upper part of the P-type epitaxial layer 2 is provided with an N-type doped region 301 and a P-well isolation region 305, so A floating diffusion node 303 is arranged on the upper part of the P-well isolation region 305;

[0086] The upper surface of the P-type epitaxial layer 2 is provided with a transmission gate 302;

[0087] A P-type isolation region 304 is provided between the pixel unit 3 and the adjacent pixel unit 5 and / or the logic circuit region 4;

[0088] The depth of the P-type isolation region 304 is not less than the depth of the N-type doped region 301 .

[0089] In this embodiment, both ends of the transfer gate 302 partially overlap with the N-type doped region 301 and the floating diffusion node 303, so that when the transfer gate 302 is turned on, that is, when a suffic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a pixel unit and a preparation method thereof, the method comprising: step 1, injecting a P-type material into the P-type epitaxial layer around the edge of the pixel unit to form an isolation region; step 2, forming an isolation region on the upper surface of the P-type epitaxial layer The polysilicon gate, and etches the polysilicon gate to obtain the transfer gate; step 3, inject N-type material into the P-type epitaxial layer twice to form an N-type doped region; Step 4, inject N-type doped region on the upper part of the P-type epitaxial layer The material forms a suspended diffusion node. The invention realizes the effect of suppressing crosstalk in the body area, reduces the area waste of the pixel unit element and the area between the pixel and the logic circuit, and effectively improves the filling factor.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a pixel unit and a preparation method thereof. Background technique [0002] In recent years, the excellent characteristics of near-infrared enhanced image sensors in detection have promoted their wide application, and they have developed rapidly in the fields of medical imaging, lidar, machine vision and intelligent transportation. Especially in the field of lidar ranging, for safety reasons, near-infrared light is often used as the detection light to avoid damage to human eyes, so the photodiode receiving echo information is required to be very sensitive to near-infrared light In order to analyze and obtain the distance of the target object. [0003] For the same semiconductor material, the absorption coefficient and the incident depth are related to the wavelength of the incident light. The longer the wavelength, the smaller the absorption coefficient and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14683
Inventor 雷述宇
Owner NINGBO ABAX SENSING ELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com