3D memory device

Abstract

A 3D memory device is disclosed that includes a core region having a channel hole; an auxiliary region including virtual holes and / or grooves; a substrate is a bottom layer of that 3D memory device ina direction perpendicular to the surface of the 3D memory device, wherein the bottom of the channel hole has an epitaxial layer, and the bottom of the dummy hole and / or trench has an oxide lay. The embodiment of the invention forms an oxide layer in a virtual hole and / or a trench in an auxiliary region, and forms an epitaxial layer in a channel hole in a core region, thereby solving the problemsof uneven epitaxial layer and current leakage caused by the formation of the epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a 3D memory device. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] A 3D memory device includes a core region forming a memory cell and an auxiliary region forming a peripheral structure. In 3D memory devices, such as 3D NAND flash memory, it is necessary to form an epitaxial layer at...

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, the object of the present invention is to provide a 3D memory device, which can solve the problems of uneven epitaxial layer and current leakage due to the formation of the epitaxial layer in the auxiliary region.

Images