Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Composite luminescent layer, QLED device and preparation method thereof

A composite light-emitting layer and device technology, which is applied in the manufacture/processing of organic light-emitting devices, organic light-emitting devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as dissolution or washing away, uneven light emission of devices, and improve the uniformity of film formation The effect of improving the uniformity of light emission

Active Publication Date: 2019-01-15
TCL CORPORATION
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a composite light-emitting layer, which aims to solve the problem that the quantum dots in the quantum dot light-emitting layer are easily dissolved or washed away by the preparation solution of other functional layers in the existing preparation method of QLED devices, resulting in uneven light emission of the device The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite luminescent layer, QLED device and preparation method thereof
  • Composite luminescent layer, QLED device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] Correspondingly, an embodiment of the present invention provides a method for manufacturing a QLED device, comprising the following steps:

[0044] S01. A graphene oxide solution is provided, an organic amine ligand is added to the graphene oxide solution, and mixed to obtain a graphene oxide / organic amine ligand mixed solution;

[0045] S02. Provide a substrate, and sequentially deposit an anode, a hole injection layer, and a hole transport layer on the substrate;

[0046] S03. Depositing the graphene oxide / organic amine ligand mixed solution on the hole transport layer to obtain an auxiliary functional layer, depositing a quantum dot layer on the auxiliary functional layer, the auxiliary functional layer and the quantum Combination of point layers to form a composite light-emitting layer;

[0047] S04. Depositing an electron transport layer and a cathode sequentially on the composite light-emitting layer.

[0048] Specifically, in the above step S01, the graphene ox...

Embodiment 1

[0057] A method for preparing a QLED device containing a graphene oxide-mercaptoethylamine-quantum dot composite light-emitting layer, comprising the following steps:

[0058] S11. Provide a graphene oxide solution, add mercaptoethylamine to the graphene oxide solution, mix well, and prepare a graphene oxide / mercaptoethylamine mixed solution, wherein the mass ratio of graphene oxide to mercaptoethylamine is 1:0.02 ;

[0059] S12. Provide ITO conductive glass, spin-coat PEDOT:PSS film on the ITO conductive glass as a hole injection layer, and spin-coat a layer of TFB on the hole injection layer as a hole transport layer;

[0060] S13. Deposit the graphene oxide / mercaptoethylamine mixed solution on the hole transport layer to obtain an auxiliary functional layer (graphene oxide-mercaptoethylamine layer), spin-coat CdSe / ZnS on the auxiliary functional layer Quantum dot luminescent layer, the auxiliary function layer is combined with the quantum dot layer to form a composite lumi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a composite light-emitting layer, comprising an auxiliary functional layer formed by a graphene oxide and an organic amine ligand, and a quantum dot layer bonded on the auxiliary functional layer, wherein the surface of the graphene oxide contains electron-rich functional groups, and the structural formula of the organic amine ligand is Y- R-R1N + (R2) R3, wherein R is one of a hydrocarbyl group, an aryl group and derivatives thereof; R1, R2, R3 are independently selected from one of H and hydrocarbon groups; In the composite light-emitting layer, the organic amine ligand-R1N + (R2) R3 is connected to an electron-rich functional group on the graphene oxide surface, and Y of the organic amine ligand is bound to a quantum dot in the quantum dot layer.

Description

technical field [0001] The invention belongs to the technical field of quantum dot light-emitting diodes, and in particular relates to a composite light-emitting layer, a QLED device and a preparation method thereof. Background technique [0002] Due to their unique optical properties, the application of quantum dots (QDs) in light-emitting diodes has been greatly developed in recent years and has aroused widespread interest. The advantages of high luminous brightness, pure color and easy color adjustment of quantum dots make them the best candidates for the color center of next-generation displays and solid-state light sources. Light-emitting diodes based on quantum dot materials and technology are called quantum dot light-emitting diodes (QLEDs). Compared with traditional light-emitting diodes and organic light-emitting diodes (Organic light-emitting diodes, OLEDs), QLEDs have many advantages , such as the device is not easily oxidized in a water-oxygen environment, has g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K2102/301H10K71/00
Inventor 梁柱荣曹蔚然刘佳
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com