Semiconductor device manufacturing method

Abstract

A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.

Description

technical field [0001] Embodiments of the present invention relate to fabricating semiconductor devices, and more particularly to forming contacts (also called contact plugs) in semiconductor devices. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth due to continuous improvements in the integration density of various electronic components such as transistors, diodes, resistors, capacitors, or the like. The main improvement of the above-mentioned integration density is to continuously reduce the size of the smallest structure, so that more components can be integrated into a limited area. [0003] Transistor size shrinks, shrinking the size of each structure. In advanced process technology, when the channel length of the transistor reaches the same level as the width of the depletion layer, the short channel effect will occur and adversely affect the performance of the transistor. This technical field requires structur...

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Problems solved by technology

In advanced process technology, when the channel length of the transistor reaches the same level as the width of the depletion layer, the short channel effect will occur and adversely affect the transistor performance

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