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A kind of anti-total dose radiation hardening method of flash storage circuit

A technology of flash memory storage and anti-total dose, which is applied in the field of digital circuits, can solve the problems of reducing storage array storage density, multi-chip area, occupation, etc., and achieve the effect of improving the anti-total dose radiation ability

Active Publication Date: 2020-06-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

However, compared with ordinary strip gate devices, the ring gate will occupy more chip area and reduce the storage density of the memory array.
Especially for large-scale memory arrays, the use of ring gate structure devices will seriously increase production costs

Method used

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  • A kind of anti-total dose radiation hardening method of flash storage circuit
  • A kind of anti-total dose radiation hardening method of flash storage circuit
  • A kind of anti-total dose radiation hardening method of flash storage circuit

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Embodiment Construction

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] The invention provides an anti-total dose radiation hardening method for a flash memory. In the flash memory storage circuit, it includes a plurality of MOS transistors arranged in a matrix array, and each MOS transistor is a storage unit, and its on or off corresponds to binary value code 1 or 0 respectively. The drain of the MOS tra...

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Abstract

The invention provides a total dose radiation resistant strengthening method of a flash memory circuit, which comprises the following steps of: 1, providing a flash memory array and adding a monitoring memory array with a pre-stored logic value of 0 connected to the flash memory array; 2, determining the read voltage of the monitoring memory array; 3, determining a threshold value of a number of monitor memory array cells whose logical value changes to 1; 4, sequentially reading the read data of the monitoring memory array unit and adding the read data under the working state of the flash memory array; 5, comparing the addition result with the quantity threshold value of the monitoring memory array cell, and clearing the addition result when the addition result is less than the quantity threshold value; when the addition result is greater than or equal to the number threshold, refreshing the flash memory array and the monitor memory array. The invention can detect the leakage of the memory array in advance and refresh the memory array in time, thereby improving the total dose radiation resistance of the memory array and ensuring the stability of the device.

Description

technical field [0001] The invention relates to the technical field of digital circuits, in particular to a method for hardening anti-total dose radiation of a flash storage circuit. Background technique [0002] Flash memory (Flash) memory has the advantages of online programming, data information will not be lost when power is turned off, high read and write speed, and good vibration resistance. In recent years, it has been widely used in aerospace electronic systems. Various high-energy particles in space will seriously affect various electronic components including Flash memory, causing various radiation effects. Among them, the total dose effect is one of the most important problems that Flash memory needs to face in space applications. [0003] The total dose effect is the ionizing radiation effect of cumulative dose, which is a process in which long-term radiation dose accumulation leads to device failure. The damage mechanism of the total dose effect on the device ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/22
CPCG11C16/22
Inventor 李梅毕津顺戴茜茜刘明李博习凯
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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