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A trench type insulated gate bipolar transistor and its preparation method

A bipolar transistor, insulated gate technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of increasing forward voltage drop, increasing device drift region, forward voltage drop and turn-off loss. It can reduce the conduction voltage drop, optimize the turn-off loss, and enhance the conductance modulation effect.

Active Publication Date: 2020-10-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to maintain a certain blocking capability of the device in practical applications, technicians have to increase the thickness of the drift region of the device, which instead increases the forward voltage drop and deteriorates the compromise between forward voltage drop and turn-off loss.

Method used

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  • A trench type insulated gate bipolar transistor and its preparation method
  • A trench type insulated gate bipolar transistor and its preparation method
  • A trench type insulated gate bipolar transistor and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] This embodiment provides a trench-type silicon carbide insulated gate bipolar silicon carbide transistor, the half-cell structure of which is as follows image 3 As shown, it includes: metallized collector electrode (11), P-type silicon carbide collector region (10), N-type silicon carbide field stop layer 9, N-silicon carbide drift region (7), P-type silicon carbide base region ( 6), N+ silicon carbide emitter region (3), trench gate structure and emitter metal (4); the metallized collector (11) is located on the back of the P-type silicon carbide collector region (10), and the N-type silicon carbide field The stop layer 9 is located on the front of the P-type silicon carbide collector region (10), and the N-silicon carbide drift region (7) is located on the front of the N-type silicon carbide field stop layer 9; the P-type silicon carbide base region (6) and the N+ carbide The silicon emitter region (3) is located side by side under the emitter metal (4), wherein the ...

Embodiment 2

[0059] This embodiment provides a trench-type silicon carbide insulated gate bipolar silicon carbide transistor, the half-cell structure of which is as follows Figure 4 As shown, in this embodiment, on the basis of Embodiment 1, the first P-type silicon layer 13 is arranged to extend into the lower P-type base region 6 to form a trench, and the first P-type silicon layer 13 is formed in the trench. The bottom and side walls of the groove form a heterojunction with the P-type base region 6 and the N-type emitter region 3; the groove depth of the first P-type silicon layer 13 can be the same as that of the N+ emitter region 3, or it can be different.

[0060] Compared with Embodiment 1, this embodiment reduces the parasitic resistance formed in the P-type base region 6, reduces the voltage drop formed by the hole current in the P-type base region 6, and further suppresses the possible dynamic latch of the device. lock, which improves the high current shutdown capability of the ...

Embodiment 3

[0062] This embodiment provides a trench-type silicon carbide insulated gate bipolar silicon carbide transistor, the half-cell structure of which is as follows Figure 5 As shown, the schematic cross-sections along the lines AB and CD of the semi-cellular structure are shown in Image 6 with 7 As shown, this embodiment is based on Embodiment 2, which introduces a second P-type silicon layer 14 in the first P-type shielding layer 8, and the second P-type silicon layer 14 is externally connected to the emitter metal 4. The second P-type silicon layer 14 forms a heterojunction with the first P-type shielding layer 8 .

[0063] Compared with Embodiment 2, this example makes the first P-type shielding layer 8 not in the floating state, thereby solving the problem of the first P-type shielding layer 8 floating in the air. In the off state, although the negative charge in the floating P-type shielding layer can suspend part of the electric field lines, modulate the electric field a...

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Abstract

A trench type insulated gate bipolar transistor and a preparation method thereof belong to the technical field of power semiconductors. The present invention introduces a semiconductor layer or a Schottky contact metal with a relatively small bandgap width on the upper surface of the base region of the device near the outer side of the emitter region, and enhances the conductance by using the heterojunction or the Schottky contact as a minority carrier barrier The modulation effect reduces the turn-on voltage drop of the device, optimizes the compromise characteristics of the forward voltage drop and turn-off loss of the device; and because the heterojunction or Schottky contact introduced by the present invention can replace the CS layer in function, Therefore, it is beneficial to reduce the electric field strength of the base region and the drift region to form a PN junction to increase the breakdown voltage of the device; and make the electric field strength of the gate oxide layer below the safe value (3MV / cm), thereby ensuring the reliability of the gate oxide layer. In addition, the fabrication process of the device is simple and controllable, and has strong compatibility with existing processes.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a trench type insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a bipolar device controlled by an insulated gate. The higher the non-equilibrium carrier concentration in the body, the more significant the conductance modulation effect and the higher the current density. figure 1 It shows a semi-cellular structure of a traditional trench type IGBT device. When the device is in forward conduction, due to the extraction of minority carriers by the reverse-biased PN junction formed by the base region 6 and the drift region 7, the conductance modulation effect is not significant. Significantly, the forward voltage drop is too large, and the compromise characteristics cannot be improved. In order to overcome the defect that the electron injection ability on the cathode ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/10H01L29/08H01L29/06H01L21/331
CPCH01L29/0615H01L29/0688H01L29/0817H01L29/1095H01L29/66348H01L29/7397
Inventor 张金平罗君轶赵阳刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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