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A transistor and a manufacturing method thereof

A manufacturing method and triode technology, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of unstable device amplification factor, and achieve the effect of good protection and stable amplification factor

Inactive Publication Date: 2018-12-21
深圳市诚朗科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the surface of the base region and the emitter region, a large number of processes will be experienced, such as implantation, etching, metallization, etc., which will bring a large number of defects to the surface of the base region and the emitter region, which will eventually lead to a very unstable amplification factor of the device.

Method used

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  • A transistor and a manufacturing method thereof
  • A transistor and a manufacturing method thereof
  • A transistor and a manufacturing method thereof

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Embodiment Construction

[0013] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0014] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or posi...

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Abstract

The invention relates to a transistor and a manufacturing method thereof. The method comprises the following steps of: providing a substrate of a first conductivity type; forming a first epitaxial layer of the first conductivity type on the substrate; Forming a first dielectric layer on the first epitaxial layer; Forming a trench on the first epitaxial layer by using the first dielectric layer asa mask; Forming a current collector region of a first conductivity type in a first epitaxial layer region of the bottom and sidewall of the trench by a first implantation; Filling the trench with a second epitaxial layer of a second conductivity type; subjecting A surface of that second epitaxial layer to a second implantation to invert a portion of the second epitaxial lay into an emission regionof a first conductivity type, a second epitaxial layer region not inverted into the emission region is a base region, and an upper surface of the emission region is flat with an upper surface of thebase region. The amplification factor of the transistor formed by this method is stable.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a triode and a manufacturing method thereof. Background technique [0002] In the prior art, the base region is formed by an annealing process after the implantation process, and the junction depth and junction morphology of the base area are greatly affected by the annealing process, while the polycrystalline emitter process is all implanted with a large dose in the polycrystalline body, and then high temperature and rapid Thermal annealing, so that impurities diffuse into the base region to form the emitter junction. On the surface of the base region and the emitter region, a large number of processes will be experienced, such as implantation, etching, metallization, etc., which will bring a large number of defects to the surface of the base region and the emitter region, and eventually cause the amplification factor of the device to be very unstable. Contents of the i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L29/06H01L21/331
CPCH01L29/0684H01L29/66272H01L29/73
Inventor 不公告发明人
Owner 深圳市诚朗科技有限公司
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