Method for preparing carbon nanotube

Abstract

The invention relates to a method for preparing a carbon nanotube. The method comprises the steps of: providing a substrate, and depositing a catalyst layer on the surface of the substrate; placing the substrate in a reaction furnace, performing heating to bring the temperature in the reaction furnace to a predetermined temperature, introducing a carbon source gas and a protective gas into the reaction furnace, so as to grow a first carbon nanotube segment structure on the substrate, wherein the first carbon nanotube segment structure comprises a plurality of metallic carbon nanotube segments;applying an electric field to the grown first carbon nanotube segment structure, wherein the electric field direction is a direction for positively charging the catalyst layer; and reversing the electric field direction so as to grow a semiconducting carbon nanotube segment from the metallic carbon nanotube segment.

Description

technical field [0001] The invention relates to the technical field of carbon nanotube chirality, in particular to a preparation method of carbon nanotube. Background technique [0002] Carbon nanotubes have attracted extensive attention due to their excellent properties such as high Young's modulus, tensile strength, and high thermal conductivity. [0003] In the single-walled carbon nanotubes prepared by the traditional chemical vapor deposition method, the ratio of metallic carbon nanotubes and semiconducting carbon nanotubes is about 1:2. In order to obtain semiconducting carbon nanotubes with higher purity, in the past two decades, after continuous research on the thermodynamics and kinetics of carbon nanotubes, people have been able to grow semiconducting carbon with a purity of 97% by CVD. nanotube. [0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity. At the same time, in the prior art, the chirality of car...

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Problems solved by technology

[0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity.

At the same time, in the prior art, the chirality of carbon nanotubes cannot be arbitrarily changed during the growth of carbon nanotubes, that is, carbon nanotubes cannot form carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments as required during the growth process. nanotube

At the same time, it is impossible to apply the above-mentioned carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments to carbon nanotube structures and applications of carbon nanotube structures, such as thin film transistors, photodetectors, Photoelectric conversion module, etc.

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