High trigger voltage thyristor

A trigger voltage and thyristor technology, applied in the direction of thyristors, diodes, etc., can solve the problems of thyristor false opening, high trigger voltage, low trigger voltage, etc., achieve small packaging stress, improve reliability, and high liquidus Effect

Inactive Publication Date: 2018-11-23
西安卫光科技有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a high trigger voltage thyristor for the problem that the trigger voltage of the conventional thyristor is low, and it may be triggered and turned on in the environment of strong electromagnetic pulse radiation such as weapon equipment launch.
The trigger voltage of the high trigger voltage thyristor is high and can be precisely controlled, which solves the problem that the thyristor is triggered and turned on by mistake in a strong electromagnetic pulse radiation environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High trigger voltage thyristor
  • High trigger voltage thyristor
  • High trigger voltage thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] S1: First select a metal frame, which is a KFC (CuFe_0.1P_0.03) copper frame with a thickness of 0.5 mm.

[0034] S2: Point solder on the PAD of the anode A on the copper frame, the solder is Pb / Sn / Ag=92.5:5:2.5, and point conductive silver paste on the PAD of the control pole G of the copper frame.

[0035] S3: Glue a thyristor chip on the solder on the PAD of the anode A on the copper frame, and glue a diode chip on the conductive silver paste on the PAD of the control electrode G of the copper frame. By sintering, the thyristor chip is well adhered to the anode A on the copper frame, and the diode chip is well adhered to the gate G of the copper frame.

[0036] S4: Pressure-weld two high-purity aluminum wires between the larger cathode bonding area of ​​the thyristor chip and the K-electrode pin of the copper frame. The high-purity aluminum wires have a purity of 99.99% and a diameter of 12 mils.

[0037] S5: Press-weld a high-purity gold wire between the small cont...

Embodiment 2

[0040] S1: First select a metal frame, which is a KFC (CuFe_0.1P_0.03) copper frame with a thickness of 0.5 mm.

[0041] S2: Point solder on the PAD of the anode A on the copper frame, the solder is Pb / Sn / Ag=92.5:5:2.5, and point conductive silver paste on the PAD of the control pole G of the copper frame.

[0042]S3: Glue a thyristor chip on the solder on the PAD of the anode A on the copper frame, and glue a diode chip on the conductive silver paste on the PAD of the control electrode G of the copper frame. By sintering, the thyristor chip is well adhered to the anode A on the copper frame, and the diode chip is well adhered to the gate G of the copper frame.

[0043] S4: Pressure-weld two high-purity aluminum wires between the relatively large cathode bonding area of ​​the thyristor chip and the K-electrode pin of the copper frame. The high-purity aluminum wires have a purity of 99.99% and a diameter of 10 mils.

[0044] S5: Press-weld a high-purity gold wire between the s...

Embodiment 3

[0047] S1: First select a metal frame, which is a KFC (CuFe_0.1P_0.03) copper frame with a thickness of 0.5 mm.

[0048] S2: Point solder on the PAD of the anode A on the copper frame, the solder is Pb / Sn / Ag=92.5:5:2.5, and point conductive silver paste on the PAD of the control pole G of the copper frame.

[0049] S3: Glue a thyristor chip on the solder on the PAD of the anode A on the copper frame, and glue a diode chip on the conductive silver paste on the PAD of the control electrode G of the copper frame. By sintering, the thyristor chip is well adhered to the anode A on the copper frame, and the diode chip is well adhered to the gate G of the copper frame.

[0050] S4: Pressure-weld two high-purity aluminum wires between the relatively large cathode bonding area of ​​the thyristor chip and the K-electrode pin of the copper frame. The high-purity aluminum wires have a purity of 99.99% and a diameter of 15 mils.

[0051] S5: Press-weld a high-purity gold wire between the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high trigger voltage thyristor. The high trigger voltage thyristor comprises a plastic package body, the plastic package body is internally provided with a thyristor chip anda diode chip, and the plastic package body is further provided with a control electrode G, an anode A, a cathode K and a lead. The diode chip is arranged on the control electrode G, one circuit of the thyristor chip passes through the diode chip and is connected to the control pole G, and the other circuit of the thyristor chip is connected to the cathode K. The high trigger voltage thyristor hasa high trigger voltage, the thyristor is effectively prevented from being triggered to be opened by a mistake under a strong electromagnetic pulse environment, the reliability is high, the trigger voltage can be precisely controlled through the voltage size of a control electrode series diode, and the high trigger voltage thyristor can be adapted to various application circuits and a new drive circuit is not required to be redesigned.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor components, in particular to a high trigger voltage thyristor. 【Background technique】 [0002] The thyristor is a high-power semiconductor device with a four-layer structure of three PN junctions, also known as a thyristor. With the characteristics of small size, relatively simple structure, and strong functions, it is one of the more commonly used semiconductor devices. The device is widely used in various electronic equipment and electronic products, and is mostly used for controllable rectification, inverter, frequency conversion, voltage regulation, non-contact switch, etc. Dimming lamps, speed-adjusting fans, air conditioners, televisions, refrigerators, washing machines, cameras, combined audio systems, sound and light circuits, timing controllers, toy devices, radio remote controls, cameras and industrial controls in household appliances are widely used A thyristor device. [000...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74
CPCH01L29/7412
Inventor 李家贵
Owner 西安卫光科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap