A Transient Voltage Suppressor with High Sustained MOS Auxiliary Trigger Scr Structure

A technology for transient voltage suppression and voltage maintenance, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve problems such as high trigger voltage, large voltage hysteresis range, and difficult triggering, so as to avoid latch-up effect and improve maintenance voltage, improving the effect of ESD protection or anti-surge efficiency

Active Publication Date: 2020-10-30
JIANGNAN UNIV
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  • Abstract
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Problems solved by technology

And because the ordinary bidirectional SCR structure often has a high trigger voltage and a large voltage hysteresis, there are problems of difficult triggering and latch-up

Method used

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  • A Transient Voltage Suppressor with High Sustained MOS Auxiliary Trigger Scr Structure
  • A Transient Voltage Suppressor with High Sustained MOS Auxiliary Trigger Scr Structure
  • A Transient Voltage Suppressor with High Sustained MOS Auxiliary Trigger Scr Structure

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Embodiment Construction

[0023] The present invention will be further described in detail below in conjunction with the drawings and specific embodiments:

[0024] In the example of the present invention, a transient voltage suppressor with a high-maintenance MOS-assisted trigger SCR structure is designed. By using the strong ESD robustness of the SCR structure and the characteristics of the MOS-assisted trigger path, combined with the SCR, MOS and BJT multiple device structure, the design is A high-maintenance transient voltage suppressor with MOS assisted triggering of SCR is developed. Under the action of forward and reverse electrical stress, the new device not only has two-way ESD protection and anti-surge functions, but also has low trigger voltage and high maintenance voltage characteristics, which can enhance the anti-latching resistance of transient voltage suppressors under electrical stress. Lock ability and ESD robustness.

[0025] The three-dimensional structure of the device of the present i...

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Abstract

A high-maintenance metal oxide semiconductor (MOS) auxiliary-triggering SCR-structure transient voltage suppressor belongs to the field of electrostatic discharge protection and surge resistance of anintegrated circuit and can be used for improving electrostatic discharge (ESD) capability of a chip. The device comprises an embedded MOS, an SCR, a BJT structure and a metal line, wherein a forwardESD current relief path of the SCR structure is assisted by PNP, NPN and a PMOS, and a reverse ESD current relief path of the SCR structure is assisted by the NPN, the PNP and an NMOS. The device hasthe characteristics of low triggering, high maintenance voltage and small voltage hysteresis and also has high ESD robustness; and compared with a one-way transient device, the device has the advantages that the ESD protection capability of the transient voltage suppressor per unit area is high.

Description

Technical field [0001] The invention belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits, relates to an electrostatic discharge protection or anti-surge device, in particular to a transient voltage suppressor with a high-maintenance MOS auxiliary triggering SCR structure, which can be used to improve the on-chip IC And the reliability of the electronic product system. Background technique [0002] With the widespread application of integrated manufacturing technology and integrated circuits (IC), portable electronic products are becoming increasingly popular in daily life, bringing great convenience to people's lives. However, the high failure rate of electronic products and the weak stability of the circuit system have brought great troubles to the current electronic engineering research and application. According to investigations, electrostatic discharge (ESD) or transient surges are the main factors that cause the failure of elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0259H01L27/0262H01L27/0266H01L27/0296
Inventor 梁海莲许强顾晓峰
Owner JIANGNAN UNIV
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