Precise harmonic control-based efficient class E stacked power amplifier

Abstract

The invention discloses a precise harmonic control-based efficient class E stacked power amplifier. The precise harmonic control-based efficient class E stacked power amplifier comprises an input fundamental wave matching network, a two-stacking self-bias power amplification network, an efficient harmonic control class E output matching network, a gate power supply bias network, and a drain powersupply bias network. The amplifier adopts a two-stacking transistor structure based on a self-bias structure, and integrates the efficient harmonic control class E output matching network, so that thecircuit has an efficient, high-power output capability with high gain.

Description

technical field [0001] The invention belongs to the technical field of field effect transistor radio frequency power amplifiers and integrated circuits, and in particular relates to the design of a high-efficiency Class E stack power amplifier based on precise harmonic control. Background technique [0002] With the development of modern military and civilian communication technologies, RF front-end transmitters are also developing in the direction of miniaturization, high efficiency, high gain, and high power output. Therefore, the market urgently needs miniaturized, high-efficiency, high-gain, and high-power power amplifiers. However, in the design of traditional high-efficiency power amplifiers, there have always been some design problems, mainly reflected in the mutual constraints of miniaturization and high-efficiency indicators: in order to ensure the high-efficiency operation of the amplifier, the transistor must work in the overdrive mode, similar to the switch stat...

AI Technical Summary

Problems solved by technology

However, in the design of traditional high-efficiency power amplifiers, there have always been some design problems, mainly reflected in the mutual constraints of miniaturization and high-efficiency indicators: in order to ensure the high-efficiency operation of the amplifier, the transistor must work in the overdrive mode, similar to the switch state, but the harmonic impedance control unit of the overdrive switching power amplifier often needs to occupy a larger circuit size, which affects the miniaturization index of the circuit

[0003] There are many circuit structures of common high-efficiency power amplifiers, the most typical ones are traditional class AB, class C, switching type power amplifiers of class D, class E, and class F, etc. However, these high-efficiency amplifiers still have some shortcomings, mainly reflected in In: The theoretical limit efficiency of the traditional class AB amplifier is 78.5%, which is relatively low; the limit efficiency of the class C amplifier is 100%, but the power output capability is low; switching type D, E, F power amplifiers, etc. need to rely on accurate Harmonic impedance control, or strict impedance matching conditions, these controls and conditions often need to occupy a large circuit size

In addition, the existing high-efficiency FET power amplifiers are often implemented based on a single common-source transistor, which is limited by a single transistor, and the power output capability and power gain capability are relatively low

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