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A kind of p-type algan epitaxial film and its preparation method and application

An epitaxial thin film, p-type technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve industrial application difficulties, outstanding stability and repeatability problems, and the application value of deep ultraviolet light-emitting devices Difficulties and other problems, to achieve the effect of good repeatability and high efficiency

Active Publication Date: 2020-09-01
北京中博芯半导体科技有限公司
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Problems solved by technology

[0005] However, the repeatability and implementation effect of the above methods are extremely dependent on the material structure or growth parameters, and it is very difficult to apply them in the deep ultraviolet light-emitting device industry.
Among them, the short-period superlattice doping method is a new doping method to realize p-AlGaN, which has shown great potential in recent years, but the ultra-thin barrier layer (thickness usually needs to be less than 1 nanometer) The realization of this method cannot be realized stably by controlling the flow rate and time of the growth source in the conventional growth mode of the MOCVD system to control the thickness, which makes the stability and repeatability of the technical route prominent and difficult for industrial application

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  • A kind of p-type algan epitaxial film and its preparation method and application
  • A kind of p-type algan epitaxial film and its preparation method and application
  • A kind of p-type algan epitaxial film and its preparation method and application

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Embodiment 1

[0055] Example 1 Preparation of p-AlGaN epitaxial thin film with high Al composition

[0056] This embodiment provides a method for preparing a high Al composition p-AlGaN epitaxial film, including:

[0057] S1: Put the (0001) plane sapphire substrate in the reaction chamber of MOCVD equipment (3×2”Aixtron CCS FP-MOCVD), and pass H 2 , the reaction chamber pressure was 60mbar, baked at 1100°C for 600s, cleaned the substrate and lowered the temperature to 930°C, fed ammonia gas and TMAl to grow the AlN nucleation layer 10nm, then raised the temperature to 1250°C, and epitaxially grown AlN with a thickness of 1 Micron; then lower the temperature to 1160°C, pass through ammonia gas, TMAl and TMGa, and grow AlGaN with an Al composition of 0.6 and a thickness of 600 nanometers (i-AlGaN).

[0058] S2: Keep the atmosphere as hydrogen during the reaction period, and adjust the growth temperature to 1050°C to achieve stability.

[0059] S3: Control the molar ratio of organometallic s...

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Abstract

The invention relates to a p-type AlGaN epitaxial thin film and a preparation method and application thereof. The preparation method comprises the step as follows: the desorption rates of Ga and Al metal atoms in a growth interruption process are controlled to obtain a p-type AlGaN epitaxial thin film with a periodically changing Al<x>Ga<1-x>N / Al<y>Ga<1-y>N superlattice structure in a process of preparing AlGaN through a chemical vapor deposition method, wherein x is smaller than y. According to the method, the core difficulty in Mg atom ionization and activation is effectively overcome, stable preparation of p-AlGaN is achieved and the method is of great significance in achievement of AlGaN-based deep ultraviolet high-performance photoelectric devices and industrial application.

Description

technical field [0001] The invention relates to a p-type AlGaN epitaxial thin film with high Al composition and its preparation method and application, and belongs to the technical field of preparation of Group III nitride semiconductors. Background technique [0002] High Al composition AlGaN and its low-dimensional quantum structure optoelectronic functional materials are irreplaceable material systems for the preparation of solid-state deep ultraviolet (DUV) optoelectronic devices (such as light-emitting diodes (LEDs)), and are used in environmental protection fields such as sterilization, water and air purification. It is widely used in information fields such as large-capacity information transmission and storage, and is one of the most promising fields and industries for III-nitride semiconductors. However, it is extremely difficult to achieve efficient p-type doping of AlGaN with high Al composition, which has become the main problem and difficulty limiting high-perfo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0304H01L31/08
CPCH01L31/03044H01L31/08H01L31/1856Y02P70/50
Inventor 许福军沈波王明星解楠孙元浩刘百银王新强秦志新
Owner 北京中博芯半导体科技有限公司
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