Packaging method of three-dimensional heterostructure for realizing heat dissipation of high power GaN device layer

Abstract

The invention proposes a packaging method of a three-dimensional heterostructure for realizing heat dissipation of a high power GaN device layer for the integrated requirements of three-dimensional heterostructure integration of a high power GaN device and the heat dissipation of a device layer. A three-dimensional folding micro-channel design is realized by utilizing a plurality of laminated substrates such as a GaN chip body-TSV radio frequency adapter plate-silicon supporting block; a microfluid flows in from the bottom layer of a packaging shell and then steps up to cool a GaN device layer hot spot and then steps down and flows out, therefore, the problems in a traditional TSV three-dimensional integration technology that when an embedded micro-channel extends from the TSV adapter plate to the high power GaN chip body, a shunt design exists, a traditional three-dimensional micro-channel and a packaging body-chip are integrated and manufactured in a compatible way are solved, and the three-dimensional radio frequency heterogeneous integration application with high manufacturability, high heat dissipation efficiency and high stability is further achieved, thus the packaging method is of great significance.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to a three-dimensional heterogeneous integrated packaging method based on TSV technology to realize heat dissipation of high-power GaN device layers. Background technique [0002] The rapid development of 5G wireless communication, radar, unmanned aerial vehicles, satellites and other fields has brought a wider demand for RF front-end electronic devices. The complexity of spectrum processing, high performance, small size, high integration, and light weight are both microwave and millimeter. The important development trend of wave system is the main challenge. Since 2006, with the breakthrough of advanced SiCMOS technology and heterogeneous integration technology such as InP proposed by DARPA Microsystems in the United States, it has been demonstrated that heterogeneous integration is the only technology choice to break through technical limitations. Compared with InP-based ...

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Problems solved by technology

Generally speaking, heat sink heat dissipation technology uses composite metal materials with low thermal diffusivity to make miniature heat sinks to achieve cooling of electronic chip devices. The demand for miniaturization is an effective way to reduce chip temperature and ensure device performance, but the external heat sink cooling structure is not conducive to high-density, miniaturized 3D integrated packaging, and the heat dissipation capacity is also insufficient to meet the requirements of high-power GaN chip 3D integrated packaging. heat flux

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