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A Fe3O4/Ag@Si three-dimensional composite electrode, a preparation method thereof and an advanced oxidation integrated technical system

A three-dimensional composite and electrode technology, applied in the field of advanced oxidation integrated technology systems, can solve the problems of loss of catalysis, inability to reuse, secondary pollution, etc., and achieve the effect of promoting degradation, reducing iron sludge, and efficient degradation of pollutants

Active Publication Date: 2018-11-06
南大盐城环境工程有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The comparative patent requires a pH value between 1 and 5, which requires the addition of a large amount of acid to adjust the pH value of the reaction system; and the comparative patent uses ferrous molybdate as a catalyst, and metal molybdenum is a toxic heavy metal that dissolves into the water body It will produce secondary pollution; in addition, ferrous ions react to generate ferric ions after catalyzing persulfate, which loses its catalytic effect, cannot be reused, and produces a large amount of iron sludge, which is neither economical nor environmentally friendly

Method used

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  • A Fe3O4/Ag@Si three-dimensional composite electrode, a preparation method thereof and an advanced oxidation integrated technical system
  • A Fe3O4/Ag@Si three-dimensional composite electrode, a preparation method thereof and an advanced oxidation integrated technical system
  • A Fe3O4/Ag@Si three-dimensional composite electrode, a preparation method thereof and an advanced oxidation integrated technical system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1.1Fe 3 o 4 / Ag@Si electrode synthesis method, the steps are:

[0045] (1) Put the P-type boron-doped single crystal silicon into the HF solution and react for 5 minutes, and use the HF solution to remove the SiO on the surface of the P-type boron-doped single crystal silicon 2 The oxide layer is then taken out, rinsed with deionized water and then dried in a vacuum oven to obtain a treated silicon chip; the concentration of the HF solution for removing the oxide layer is 2.4mol / L.

[0046] (2) Add 100ml of deionized water to the polytetrafluoroethylene container, then add the HF solution and AgNO 3 Solid, to completely dissolve the silver nitrate, put the silicon chip treated in step 1 into the solution, that is, directly put the P-type boron-doped single crystal silicon into the solution by chemical method to make it react, and then wash it with deionized water Then put it into a drying oven to dry, and obtain P-type boron-doped single crystal silicon grown with el...

Embodiment 2

[0055] 2.1Fe 3 o 4 / Ag@Si electrode synthesis method, the steps are:

[0056] (1) Put the P-type boron-doped single crystal silicon into the HF solution and react for 5 minutes, and use the HF solution to remove the SiO on the surface of the P-type boron-doped single crystal silicon 2 The oxide layer is then taken out, rinsed with deionized water and then dried in a vacuum oven to obtain a treated silicon chip; the concentration of the HF solution for removing the oxide layer is 4.8mol / L.

[0057] (2) Add 100ml of deionized water to the polytetrafluoroethylene container, then add the HF solution and AgNO 3 Solid, to completely dissolve the silver nitrate, put the silicon chip treated in step 1 into the solution, that is, directly put the P-type boron-doped single crystal silicon into the solution by chemical method to make it react, and then wash it with deionized water Then put it into a drying oven to dry, and obtain P-type boron-doped single crystal silicon grown with el...

Embodiment 3

[0065] 3.1 New Fe 3 o 4 / Ag@Si electrode synthesis method

[0066] (1) Put the P-type boron-doped single crystal silicon into the HF solution and react for 5 minutes, and use the HF solution to remove the SiO on the surface of the P-type boron-doped single crystal silicon 2 The oxide layer is then taken out, rinsed with deionized water and then dried in a vacuum oven to obtain a treated silicon chip; the concentration of the HF solution for removing the oxide layer is 9.6mol / L.

[0067] (2) Add 100ml of deionized water to the polytetrafluoroethylene container, then add the HF solution and AgNO 3 Solid, to completely dissolve the silver nitrate, put the silicon chip treated in step 1 into the solution, that is, directly put the P-type boron-doped single crystal silicon into the solution by chemical method to make it react, and then wash it with deionized water Then put it into a drying oven to dry, and obtain P-type boron-doped single crystal silicon grown with elemental sil...

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Abstract

The invention relates to a Fe3O4 / Ag@Si three-dimensional composite electrode, a preparation method thereof and an advanced oxidation integrated technical system, and belongs to the technical field ofenvironmental functional material synthesis and sewage treatment. The composite electrode is prepared through growing three-dimensional dendritic elemental silver on P-type boron-doped monocrystallinesilicon and loading the three-dimensional dendritic elemental silver with Fe3O4. The composite electrode is used for electrolysis and catalysis of persulfates and organic pollutants in water can be removed through advanced oxidation.

Description

technical field [0001] The invention relates to the synthesis of environmental functional materials and sewage treatment technology, in particular to a Fe 3 o 4 / Ag@Si three-dimensional composite electrode and its preparation method and based on Fe 3 o 4 Advanced oxidation integrated technology system of Ag@Si three-dimensional composite electrode and persulfate oxidation. Background technique [0002] Advanced oxidation technology is also known as deep oxidation technology. Its principle is to use synergistic methods such as point, light radiation, and catalyst to produce more strong oxidizing intermediates, and use these strong oxidizing intermediates to interact with pollutants in water bodies. reaction to remove pollutants. Advanced oxidation technology can be divided into Fenton advanced oxidation, ozone advanced oxidation, persulfate advanced oxidation, supercritical oxidation and so on. Compared with other advanced oxidation technologies, persulfate advanced oxid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/72C02F1/467C02F1/461C02F101/30
CPCC02F1/46109C02F1/4672C02F1/725C02F2001/46133C02F2101/308
Inventor 王津南文质彬
Owner 南大盐城环境工程有限公司
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