Complementary type resistive random access memory based on GeTe and preparation method thereof

Abstract

The invention discloses a complementary type resistive random access memory based on GeTe and a preparation method thereof, and relates to the fields of novel micro-nano electronic materials and functional devices. The complementary type resistive random access memory disclosed by the invention comprises a bottom conducting electrode, a GeTe film dielectric layer arranged on the upper surface of the bottom conducting electrode and a top conducting electrode arranged on the upper surface of the GeTe film dielectric layer, wherein the bottom conducting electrode, the GeTe film dielectric layer and the top conducting electrode are prepared and obtained through a magnetron sputtering method. Resistance state switching occurs on the GeTe film dielectric layer to realize a complementary type resistive random access function through electric excitation and limiting current. The memory provided by the invention effectively solves the problem of current crosstalk in a cross array of the resistive random access memory, has the characteristics of simple preparation method, low cost, stable performance, high scaling performance and the like, and has excellent development potentials and application values in the aspect of developing nanoscaled nonvolatile memories with high memory density and low power consumption.

Description

technical field [0001] The invention relates to the field of novel micro-nano electronic materials and functional devices, in particular to a GeTe-based complementary resistive memory and a preparation method thereof. Background technique [0002] Traditional flash memory technology will face a series of technical limitations and theoretical limits after shrinking to a technology node below 20nm, and it is difficult to meet the ultra-high-density storage requirements. Therefore, it is of great significance and value to develop new storage technologies. At present, the resistive memory device developed based on the electroresistive effect has become a strong competitor for the next generation of non-volatile memory technology due to its simple structure, fast response speed, low operating power consumption, easy integration and non-volatility. have a broad vision of application. [0003] The main way to miniaturize resistive memory devices and achieve ultra-high density inte...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a GeTe-based complementary resistive memory and its preparation method to solve the problem of crosstalk of resistive memory devices.

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