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Graphene-based dye-sensitized transparent solar cell

A technology for solar cells and dye sensitization, applied in the field of solar electrodes, can solve the problems of low electron mobility, heavy metal pollution of ITO, unfavorable photoelectron transmission, etc., achieve high electrical conductivity and mechanical bearing performance, improve light conversion efficiency, and increase strength Effect

Active Publication Date: 2018-09-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional solar fuel sensitized cells use ITO as a transparent conductive electrode, which has the following problems. First, ITO has the problem of heavy metal pollution; second, ITO has poor conductivity and low electron mobility, which is not conducive to optoelectronics. The transmission; third, ITO flexibility is poor, not suitable for flexible electrodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 0.5ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a membrane by suction filtration.

[0030] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene film in a closed container, and fumigate from the bottom to the top for 1 hour at a high temperature of 80 degrees HI.

[0031] (3) The melted solid transfer agent camphor is uniformly coated on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cooled at room temperature, and the film and the substrate are separated.

[0032] (4) Slowly volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at 40 degrees to obtain an independent self-supporting graphene film.

[0033] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by mea...

Embodiment 2

[0039] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 10ug / mL, and the PC film was used as the substrate to form a film by suction filtration.

[0040] (2) Put the graphene oxide film attached to the AAO film in a closed container, and fumigate from the bottom to the top at 100 degrees HI for 0.1 h.

[0041] (3) Uniformly coat the melted solid transfer agent naphthalene on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0042] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 80 to obtain an independent self-supporting graphene film.

[0043] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by means of magnetron sputtering. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 18.4% of the molar weight of carbon atom...

Embodiment 3

[0049] (1) Graphene oxide was formulated into a graphene oxide aqueous solution with a concentration of 1 ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a film by suction filtration.

[0050] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene in a closed container, and fumigate at a high temperature of 90 degrees HI from the bottom up for 0.5h.

[0051] (3) Uniformly coat the melted solid transfer agent sulfur on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0052] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 120 degrees to obtain an independent self-supporting graphene film.

[0053] (5) Spray one layer of metal cobalt on the graphene film surface of chemical reduction with the mode of magnetron sputtering, by controlling the sputtering parameter, the molar weight of the metal n...

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Abstract

The invention discloses a graphene-based dye-sensitized transparent solar cell which comprises a transparent electrode. The transparent electrode is a graphene thin film, the thickness of the graphenethin film is not larger than 20 nm, graphene layers are cross-linked with one another, and the cross-linking degrees range from 1% to 5%. Steps of vacuum filter and film formation, chemical reduction, solid-phase transfer, metal spraying, intermediate-temperature carbonization, chlorination, high-temperature graphitization and the like are carried out on graphene oxide to obtain the graphene thinfilm. The thin film is integrally of a graphene structure, and large quantities of interlayer cross-linked structures are arranged between lamellas. The thin film can be used as photo anode, a counter electrode and the like. Compared with the prior art, the graphene-based dye-sensitized transparent solar cell has the advantages that graphene is high in electron mobility, the problem of heavy metal pollution can be solved, the cost can be reduced, and the light conversion efficiency can be improved.

Description

technical field [0001] The invention relates to a solar electrode, in particular to a graphene-based dye-sensitized transparent solar cell. Background technique [0002] With the increasingly serious environmental problems, the environmental problems brought about by the uncontrolled application of fossil energy have increasingly attracted the attention of adults. People are eager to find renewable, non-polluting new energy sources to replace heavily polluting fossil energy sources. And solar energy, as a source of earth statement, has been the object of attention. Among them, the solar sensitization cell is one of the applications, which uses the photoelectron effect of titanium dioxide to convert light into electricity. However, traditional solar fuel sensitized cells use ITO as a transparent conductive electrode, which has the following problems. First, ITO has the problem of heavy metal pollution; second, ITO has poor conductivity and low electron mobility, which is no...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184C01B32/194H01G9/20
CPCC01B32/184C01B32/194H01G9/20H01G9/2022Y02E10/542
Inventor 高超彭蠡俞丹萍沈颖卡西克燕.戈坡塞米
Owner ZHEJIANG UNIV
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