Preparation method for large-area single-layer tungsten disulfide film based on atmospheric pressure chemical vapor deposition and product

Abstract

The invention relates to a preparation method for a large-area single-layer tungsten disulfide film based on atmospheric pressure chemical vapor deposition and a product. The preparation process comprises SiO2 / Si substrate cleaning, spin coating of a WO3 anhydrous ethanol dispersion solution, substrate drying treatment, sample placement and tungsten disulfide film growth. By the adoption of the method, WO3 precursor is uniformly dispersed on a substrate by spin coating of the WO3 anhydrous ethanol dispersion solution, a single-ended-closed small-caliber quartz tube is placed in a quartz tube growth chamber, and the amount of S powder and WO3 precursor participating in a nucleation and film growth process is effectively controlled, so that the prepared tungsten disulfide film has the largearea, single layer and large size. The method has the beneficial effects of being quick and repeatable and is significant in preparation of the large-area single-layer tungsten disulfide film.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a method for preparing a large-area single-layer tungsten disulfide thin film based on atmospheric pressure chemical vapor deposition; it also relates to a product prepared by the method. Background technique [0002] Tungsten disulfide is a new type of two-dimensional material, which has excellent optical, electrical, mechanical and thermal properties, and has great application prospects in electronic devices, optoelectronic devices, sensors and other fields. Currently, with WO 3 and S solid powder as reaction precursor, SiO 2 The chemical vapor deposition method with Si as the substrate and argon as the carrier gas is the mainstream method for preparing tungsten disulfide thin films. By changing the type of substrate (gold, sapphire, BN) and carrier gas (hydrogen), controlling the growth pressure (low pressure), seeding, etc., it has been possible to grow tungsten disulfide films of di...

AI Technical Summary

Problems solved by technology

By changing the type of substrate (gold, sapphire, BN) and carrier gas (hydrogen), controlling the growth pressure (low pressure), seeding, etc., it has been possible to grow tungsten disulfide films of different sizes and layers, but now In some methods, due to the inability to effectively control the amount of reactive precursors involved in nucleation and film growth, it is difficult to control the size, number of layers, and crystal quality of tungsten disulfide films, and it is difficult to achieve repeated growth.

[0003] Therefore, there is an urgent need for a method that can effectively control the amount of reactive precursors involved in nucleation and film growth, and solve the problem that the size, number of layers and crystal quality of tungsten disulfide films are difficult to control

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