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IGBT short-circuit overcurrent detecting circuit

A detection circuit, short-circuit overcurrent technology, applied in bipolar transistor testing, single semiconductor device testing, etc., to achieve the effect of cost saving, easy integration and simple structure

Active Publication Date: 2018-09-07
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the IGBT is short-circuited with load, the current I flowing through its collector C Instantaneous sharp increase, IGBT enters the saturation region

Method used

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  • IGBT short-circuit overcurrent detecting circuit
  • IGBT short-circuit overcurrent detecting circuit
  • IGBT short-circuit overcurrent detecting circuit

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Embodiment Construction

[0049] Below in conjunction with the drawings, preferred embodiments of the present invention are given and described in detail.

[0050] Such as Figure 4 As shown, the present invention, that is, an IGBT short-circuit overcurrent detection circuit, includes: a first IGBT Q 1 , the second IGBTQ 2 , gate driver module Gate Driver, field programmable gate array FPGA, bandpass filter Filter1, first comparator CMP 1 , the second comparator CMP 2 , the third comparator CMP 3 , T flip-flop D 1 , AND gate AND and RS flip-flop SR, where,

[0051] First IGBT Q 1 is the IGBT to be detected, and it is connected with the second IGBT Q 2 connected in series between the bus bar and ground, the first IGBT Q in the series 1 and the second IGBT Q 2 constitute a half-bridge structure; specifically: the second IGBT Q 2 The collector receives the power loop bus voltage V supply , whose gate is connected to its emitter to the first IGBT Q 1 collector of the first IGBT Q 1 The emitter...

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Abstract

The invention relates to an IGBT short-circuit overcurrent detecting circuit. The circuit comprises a band-pass filter connected with the grid electrode of a first IGBT, a first comparator which is connected with the band-pass filter and used for receiving a first reference voltage, a T triggering device which is connected with the first comparator and used for outputting a first logical signal, asecond comparator which is connected with the grid electrode of the first IGBT and used for receiving a second reference voltage and outputting a second logical signal, an AND gate used for receivingthe first and second logical signals and outputting an hard-staring error detecting signal, a third comparator connected with the grid electrode of the first IGBT and used for receiving a third reference voltage and an RS triggering device connected with the third comparator and used for outputting a loading short-circuit error detecting signal. By means of the circuit, IGBT hard-starting error detection and IGBT loading short-circuit detection can be simultaneously achieved, the structure is simple and easy to implement, and the cost is saved.

Description

technical field [0001] The invention relates to an IGBT short circuit overcurrent detection circuit. Background technique [0002] As we all know, IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) has high reliability, simple driving, easy protection, high switching frequency, voltage-type driving, low driving power, reduced saturation voltage, high voltage and high current resistance, etc. It has been widely used in various traditional and emerging fields such as automotive electronics, consumer electronics, rail transit, electric power, and new energy. [0003] When the collector current of the IGBT is greater than its rated current, the device works in an overcurrent state. According to the degree of IGBT overcurrent, it can be divided into two types: short circuit overcurrent and overload overcurrent. Among them, IGBT short circuit overcurrent can be divided into two situations: IGBT hard turn-on error and IGBT load short circuit: [0004] (1)...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2608
Inventor 徐大伟李新昌程新红董业民朱弘月徐超
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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