Flat panel detector and its preparation method

Abstract

The invention provides a flat plate detector and a preparation method thereof. The flat plate detector comprises a substrate, a thin film transistor, a first electrode and a photoelectric conversion film layer. The thin film transistor is arranged on the first surface of the substrate. The first electrode is arranged on the first surface and on the same layer with the grid electrode of the thin film transistor. The photoelectric conversion film layer is arranged between the first electrode and the drain electrode of the thin film transistor, and is electrically connected with the first electrode and the drain electrode. The inventor finds that the flat plate detector is simple in structure, easy to achieve and quite thin; the grid electrode of the thin film transistor and the first electrode are arranged on the same layer, so the structure can be simplified and the technique processes are reduced; the photoelectric conversion film is arranged between the first electrode and the drain electrode, so the whole technique steps can be reduced and the yield of factories can be greatly improved; and meanwhile, the yield of the flat plate detector is quite high and can be prevented from being scratched during transmission or use processes.

Description

technical field [0001] The present invention relates to the technical field of photoelectric conversion, in particular to a flat panel detector and a preparation method thereof. Background technique [0002] Flat panel detectors, especially amorphous silicon diode flat panel detectors, are favored by a large number of customers due to their large size, high resolution, high sensitivity, and low noise. However, the traditional process of preparing flat panel detectors is through multiple masks (MASK ) process can be completed, the preparation process is more complicated, and the cost is higher, which greatly affects the production capacity of the factory, and also affects the yield rate of the product. [0003] Therefore, the current flat panel detectors still need to be improved. Contents of the invention [0004] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. Therefore, an object of the present inventio...

AI Technical Summary

Problems solved by technology

[0002] Flat panel detectors, especially amorphous silicon diode flat panel detectors, are favored by a large number of customers due to their large size, high resolution, high sensitivity, and low noise. However, the traditional process of preparing flat panel detectors is through multiple masks (MASK ) process can be completed, the preparation process is more complicated, and the cost is higher, which greatly affects the production capacity of the factory, and will also affect the yield of the product

[0003] Therefore, the current flat panel detectors still need to be improved

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