A method for establishing multiphysics coupled large-signal model of gan HEMT device

Abstract

The invention discloses a method for establishing a GaN HEMT device multi-physics field coupled large-signal model, comprising the following steps: S1: respectively establishing the mapping relationship between device thermal parameters, electrical parameters and stress parameters and device physical parameters; S2: based on the physical basis Signal model modeling theory, deriving the analytical expression of the kernel of the large signal model; S3: respectively embedding thermal-electrical coupling, thermal-mechanical coupling, and mechanical-electrical coupling into the kernel of the large-signal model to obtain the modified kernel of the large-signal model ; S4: Bring the modified large-signal model kernel into the equivalent circuit topology of the model to form a complete electric-thermal-mechanical multiphysics coupled large-signal model. The invention introduces the influence of stress in the GaN epitaxial layer, thereby fully describing the electric-thermal-mechanical multi-physical field coupling effect of the device, improving the accuracy of the GaN HEMT device model, and the model can be used to guide new device design and process improvement.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for establishing a GaN HEMT device multi-physical field coupling large signal model. Background technique [0002] AlGaN / GaN high electron mobility transistor (GaN HEMT) has the advantages of very high two-dimensional electron gas (2DEG) concentration, high saturation electron migration velocity and high breakdown voltage, making GaN HEMT devices have GaAs devices in microwave power applications The incomparable advantages are the current research and application hotspots, and have been more and more widely used in communication, radar, electronic warfare and other fields. [0003] Due to the low thermal conductivity of GaN itself, coupled with material characteristics and process limitations, it is difficult to directly adopt the homoepitaxial method (GaN substrate growth GaN epitaxy) to prepare microwave power devices with good performance ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a GaN HEMT device multi-physics coupling large-signal model establishment method, and solve the problem that the traditional GaN HEMT device large-signal model does not fully describe the multi-physics coupling effect, resulting in model low precision question

Images