Establishing method of multi-physics-field coupling large signal model of GaN HEMT component

Abstract

The invention discloses an establishing method of a multi-physics-field coupling large signal model of a GaN HEMT component. The method comprises the steps that S1, mapping relationships among physical parameters of the component and thermal parameters, electric parameters and stress parameters of the component are established respectively; S2, an analytical expression of the inner core of the large signal model is induced based on a large signal model modeling principle; S3, thermal-electric coupling, thermal-dynamic coupling and dynamic-electric coupling are quantized and embedded in the inner core of the large signal model to obtain a corrected inner core of the large signal model; S4, the corrected inner core of the large signal model is brought into a model equivalent circuit topologyto construct a complete electric-thermal-dynamic multi-physics-field coupling large signal model. According to the method, the influence of stress of a GaN outward extending layer is introduced, so that the electric-thermal-dynamic multi-physics-field coupling effect of the component is comprehensively described to improve the accuracy of a GaN HEMT component model, and the model can be used forguiding the designing and processing improvement of a novel component.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for establishing a GaN HEMT device multi-physical field coupling large signal model. Background technique [0002] AlGaN / GaN high electron mobility transistor (GaN HEMT) has the advantages of very high two-dimensional electron gas (2DEG) concentration, high saturation electron migration velocity and high breakdown voltage, making GaN HEMT devices have GaAs devices in microwave power applications The incomparable advantages are the current research and application hotspots, and have been more and more widely used in communication, radar, electronic warfare and other fields. [0003] Due to the low thermal conductivity of GaN itself, coupled with material characteristics and process limitations, it is difficult to directly adopt the homoepitaxial method (GaN substrate growth GaN epitaxy) to prepare microwave power devices with good performance ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a GaN HEMT device multi-physics coupling large-signal model establishment method, and solve the problem that the traditional GaN HEMT device large-signal model does not fully describe the multi-physics coupling effect, resulting in model low precision question

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