Electrostatic discharge device with replaced gate and used for improving maintaining voltage, and manufacturing method thereof
A technology for maintaining voltage and electrostatic discharge. It is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, and electrical components. It can solve the problems that affect the robustness of the LDMOS structure, uneven fork guide conduction, and the device cannot be turned off. Uneven conduction characteristics, preventing uneven conduction, and easy operation
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[0033] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0034] Such as figure 2 , image 3 , Figure 5 As shown, an electrostatic discharge device with a dummy gate with increased sustain voltage includes a substrate P-SUB101, a HVNW region 102, a P-body region 103, an NDD region 104, a first P+ injection region 105, and a first N+ injection region 106 , the second N+ implantation region 107, the third N+ implantation region 108, the first polysilicon gate 205, the second polysilicon dummy gate 206, the substrate P-SUB 101 is provided with the HVNW region 102, the HVNW region 102 A P-body region 103 and an NDD region 104 are provided in sequence from left to right in the P-body region 103, and a first P+ implantation region 105 and a first N+ implantation region 106 are arranged in sequence in the P-body region 103 from left to right. A polysilicon gate 205 spans between the HVNW region 102 and the P-body ...
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