Density functional and hybrid functional-based method for calculating defect motion of Si
A technology of density functional and hybridization, applied in the field of analog calculation, can solve the problem of low accuracy of Si movement energy, achieve the effect of improving calculation accuracy, less time-consuming, and lower cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0028] Specific implementation mode one: combine figure 1 To illustrate this embodiment, the specific process of the method for calculating the defect movement of Si based on density functional and hybrid functional in this embodiment is as follows:
[0029] Step 1: use FINDIT software to find the lattice parameters of Si, and obtain the lattice parameters of Si, that is, the experimental results are α=90°, β=90°, γ=90°;
[0030] a is the unit cell side length parameter of the lattice, b is the unit cell side length parameter of the lattice, c is the unit cell side length parameter of the lattice, and α, β, γ are the three angle parameters of the unit cell of the lattice;
[0031] Literature search for the forbidden band width of Si lattice, the forbidden band width is 1.2eV;
[0032] (The literature is C. Janowitz, V. Scherer, M. Mohamed, A. Krapf, H. Dwelk, R. Manzke, Z. Galazka, R. Uecker, K. Irmscher and R. Fornari / / New or J. Phys. 13 (2011) 085014. PHYSICAL REVIEW ...
specific Embodiment approach 2
[0043] Specific embodiment two: the difference between this embodiment and specific embodiment one is: adopt VASP software to optimize the crystal lattice parameter of Si in the described step two, concrete process is:
[0044] Let all the plane wave cutoff energy of Si be 320eV, the K point be 1×1×1, the Si electron convergence precision be 1E-5, and the Si ion convergence precision be 1E-2. The lattice parameter simulation result of the lowest Si energy point is α=90°, β=90°, γ=90°.
[0045] Other steps and parameters are the same as those in Embodiment 1.
specific Embodiment approach 3
[0046] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the corresponding data (a and a ratio, b and b ratio, c and c ratio, α and α Ratio, β to β ratio, γ to γ ratio, the difference between 3%-10%, and satisfying the forbidden band width is equal to the forbidden band width of the lattice of Si searched in step 1, it is considered that the simulation results are consistent with the experimental results.
[0047] Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com