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TeraHertz wave electric control modulator

A modulator and electronic control technology, applied in the direction of instruments, nonlinear optics, optics, etc., can solve the problems of slow modulation speed and high power, and achieve the effect of less energy consumption, flexible and convenient frequency adjustment characteristics

Active Publication Date: 2018-07-17
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The existing metal and vanadium dioxide composite structures used to control the intensity of terahertz waves are all based on metal microstructures and vanadium dioxide thin films, so when the vanadium dioxide is heated by an electric current to produce a phase change, the power consumed is greater , and the modulation speed is very slow

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  • TeraHertz wave electric control modulator

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Embodiment 1

[0043] The schematic diagram of the structure of the terahertz wave electronically controlled modulator in this embodiment is as follows image 3 As shown, the 3D structure of the terahertz wave electronically controlled modulator is as follows image 3 As shown in (a), the upper layer is a composite structure of metal microstructure array and vanadium dioxide particle array, and the lower layer is a substrate layer; the thickness of vanadium dioxide is 100nm, the thickness of Au is 150nm, the thickness of the substrate layer is 500μm, and the material of the substrate layer is trioxide Two aluminum; the left and right electrodes are externally connected with a constant current source. image 3 (b) is the details of the composite structure of the metal microstructure array and the vanadium dioxide particle array, wherein: P=100 μm, a=70 μm, b=54 μm, gap=3 μm, d=20 μm (d is two vanadium dioxide particle blocks The distance from the center of the vertical direction).

[0044] ...

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Abstract

The invention provides a TeraHertz wave electric control modulator. The modulator includes a lining layer and multiple rows of metal microstructure arrays. The metal microstructure arrays include conductive metal strips and multiple metal frames, wherein the metal strips and the metal frames are arranged on the surface of the lining layer; the metal frames are arranged in the length direction of the conductive metal strips, and the conductive metal strips and the metal frames form sealed patterns; each metal frame is composed of at least two conductive metal strips connected with each other through vanadium dioxide particle blocks. By means of external current, metal-insulated phase transition of particulate vanadium dioxide is controlled, that is to say that the conductivity of the vanadium dioxide particle blocks is adjusted and controlled, and therefore the resonant frequency of a metal microstructure is changed to achieve efficient and fast adjustment and control over the transmitted intensity of TeraHertz waves.

Description

technical field [0001] The invention relates to the field of terahertz functional devices, in particular to a terahertz wave electronically controlled modulator based on a metal-vanadium dioxide microstructure. Background technique [0002] Devices that actively control the amplitude of electromagnetic waves are very important devices in many electromagnetic wave bands such as microwave, terahertz, mid-far infrared, and optical fiber communications. The terahertz band (0.1-10THz) is a widely used electromagnetic band. This is because natural materials have a weak response to terahertz waves, so metamaterials with artificial periodic structures are often used to manipulate terahertz waves. In order to realize the active regulation of terahertz waves, researchers combine metamaterials with some tunable materials such as graphene and vanadium dioxide to regulate terahertz waves. [0003] Vanadium dioxide is a phase-change material with excellent performance, and it has a first...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
Inventor 陆亚林蔡宏磊黄秋萍邹崇文
Owner UNIV OF SCI & TECH OF CHINA
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