TFT manufacturing method and TFT substrate

Abstract

The invention discloses a TFT manufacturing method and a TFT substrate. In the process of etching to form a polysilicon pattern, one part of a polysilicon layer is covered by a non-hollowed region ofa photoresist pattern, the other part is exposed by a hollowed-out region of the photoresist pattern, secondly, dry etching of the polysilicon layer is carried out through employing the first etchinggas to remove protrusion of the polysilicon layer not covered by the photoresist pattern, and dry etching of the polysilicon layer is carried out through employing the second etching gas to remove thepart of the polysilicon layer not covered by the photoresist pattern. The method is advantaged in that complete etching can be facilitated to remove the polysilicon layer not covered by the photoresist pattern, and etching residue is avoided.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT (Thin Film Transistor, thin film transistor) manufacturing method and a TFT substrate. Background technique [0002] In the manufacturing process of TFT, such as figure 1 As shown, when the polysilicon (p-Si) layer 11 is formed by the ELA (Excimer Laser Anneal, excimer laser annealing) process on the amorphous silicon (a-Si) layer on the substrate 10, the grain boundary when adjacent crystal nuclei grow Pressing each other, after the crystallization is completed, the surface of the polysilicon layer 11 will form protrusions 111 with smaller shapes. In the subsequent dry etching (Dry etch) process, the photoresist pattern 12 covers the part of the polysilicon layer 11 that needs to be preserved, and exposes the part that needs to be etched and removed, but the protrusion 111 that is not covered by the photoresist pattern 12 is very small. It is difficult to be completely ...

AI Technical Summary

Problems solved by technology

In the subsequent dry etching (Dry etch) process, the photoresist pattern 12 covers the part of the polysilicon layer 11 that needs to be preserved, and exposes the part that needs to be etched and removed, but the protrusion 111 that is not covered by the photoresist pattern 12 is very small. It is difficult to be completely etched and removed, resulting in the polysilicon residue 112 on the substrate 10, that is, the etching residue, which seriously affects the characteristics of the TFT device

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